Method for carrying out data storage management to improve data reliability and related equipment

A data storage and data technology, applied in the input/output process of data processing, electrical digital data processing, digital memory information, etc., can solve problems such as no additional commands, no special processing, etc.

Pending Publication Date: 2021-09-07
SILICON MOTION INC (CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thus, the memory device may default to storing the user's user data in a data area of ​​the memory device in a cost-effective manner without any special processing, since there are no additional commands available for inter-device communication

Method used

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  • Method for carrying out data storage management to improve data reliability and related equipment
  • Method for carrying out data storage management to improve data reliability and related equipment
  • Method for carrying out data storage management to improve data reliability and related equipment

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Embodiment Construction

[0035] figure 1 It is a schematic diagram of an electronic device 10 according to an embodiment of the present invention, wherein the electronic device 10 includes a host system (host system) 20 and a memory device 100, and the host system 20 includes a host device (host device) 50 and a bridge device 60 . The main device 50 may include: at least one processor 52 (such as one or more processors), used to control the operation of the main device 50; and a power supply circuit 54, coupled to the at least one processor 52, used to provide Power supply to the above-mentioned at least one processor 52, the bridge device 60 and the memory device 100, in particular, output at least one driving voltage to the bridge device 60, and provide one or more drive voltages to the memory device 100 through the bridge device 60 (for example: through the bridge The device 60 outputs the one or more driving voltages to the memory device 100; or utilizes the bridge device 60 to stabilize (regulat...

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Abstract

A method and apparatus for performing data storage management to enhance data reliability are provided. The method includes: receiving a write command from a host system, wherein the write command indicates that writing a set of data into a non-volatile (NV) memory is required; determining whether a repeated writing condition is satisfied, wherein the repeated writing condition includes the write command being a repeated write command of a previous write command and corresponding to a same address and a same length as that of the previous write command; and in response to the repeated writing condition being satisfied, storing the set of data into at least one of a first type of blocks within the NV memory, for performing data storage enhancement processing, wherein bit count per memory cell of the first type of blocks is less than bit count per memory cell of a second type of blocks. According to the method and the related equipment, a memory device can be ensured to operate properly under various conditions, and the optimal efficiency can be achieved.

Description

technical field [0001] The present invention relates to memory control, especially to a method for data storage management to improve data reliability (reliability) and related equipment (apparatus) such as a memory device and its controller and an electronic device, such as the data Storage management can be done by means of repeated write command detection. Background technique [0002] Due to the continuous development of memory technology in recent years, various portable or non-portable memory devices (for example: memory cards conforming to SD / MMC, CF, MS, XD or UFS standards; : Embedded (embedded) memory devices conforming to UFS or eMMC specifications) are widely implemented in many applications. Therefore, how to improve access control of memory in these memory devices has become a very hot issue. [0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single level cell (Single Level Cell, SLC) ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/00G06F11/10
CPCG06F11/008G06F11/1068G11C11/5628G11C2211/5641G11C16/102G06F3/0679G06F3/061G06F3/064G06F3/0659G06F12/0246G06F2212/7207G06F3/0619G06F3/0644G06F3/0688G11C11/4074
Inventor 欧旭斌杨孟桦
Owner SILICON MOTION INC (CN)
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