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Solid solution multiferroic film, preparation method and electronic device applied to 5G storage technology

A technology of multiferroic thin films and electronic devices, which is applied in the field of electronic devices of 5G storage technology, can solve the problems of low leakage current, high remnant polarization strength and low remnant polarization strength of multiferroic thin films, and achieve stable film quality and large Electric polarization strength at room temperature, satisfying the effect of commercial application

Pending Publication Date: 2021-08-13
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the problems in the prior art that the leakage current of multiferroic materials is relatively large and the remnant polarization is low, the first purpose of the present application is to provide a solid solution multiferroic film, the leakage current of the multiferroic film is small and High remnant polarization

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  • Solid solution multiferroic film, preparation method and electronic device applied to 5G storage technology
  • Solid solution multiferroic film, preparation method and electronic device applied to 5G storage technology
  • Solid solution multiferroic film, preparation method and electronic device applied to 5G storage technology

Examples

Experimental program
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Effect test

Embodiment 1

[0078] Preparation of 0.5BiFe by Chemical Solution Deposition 0.63 Mg 0.37 0.5LaFeO 3 The method for solid solution thin film, comprises the following steps:

[0079] S1. Preparation of precursor solution: weigh bismuth nitrate pentahydrate, lanthanum nitrate hexahydrate, magnesium nitrate hexahydrate, and ferric nitrate nonahydrate according to the molar ratio of 1:1:0.37:1.63, and the volume ratio is 15:3:2 In a mixed solution of ethylene glycol methyl ether, glacial acetic acid and propionic anhydride, stirred at room temperature until dissolved to obtain a titanium-free precursor solution, the concentration of the precursor solution was 0.2 mol / L.

[0080] S2. Prepare the precursor sol: add citric acid to the precursor solution obtained in S1, the concentration of citric acid in the solution is 0.2 mol / L, stir at room temperature for more than 12 hours, and let stand for 24 hours to obtain the precursor sol;

[0081] S3. Preparation of precursor thin film: apply the pre...

Embodiment 2

[0085] Preparation of 0.5BiFe by a chemical solution deposition method 0.63 Ti 0.37 -0.5LaFeO 3 The method for solid solution thin film, comprises the following steps:

[0086]S1. Preparation of precursor solution: Bismuth nitrate pentahydrate, lanthanum nitrate hexahydrate, ferric nitrate nonahydrate, and tetrabutyl titanate are weighed according to the molar ratio of 1:1:1.63:0.37, and the volume ratio is 15:3: 2 in a mixed solution of ethylene glycol methyl ether, glacial acetic acid and propionic anhydride, stirred at room temperature until dissolved to obtain a magnesium-free precursor solution, and the concentration of the precursor solution was 0.3 mol / L.

[0087] S2. Preparing the precursor sol: adding citric acid to the precursor solution obtained in S1, the concentration of citric acid in the solution is 0.3 mol / L, stirring at room temperature for more than 12 hours, and standing for 24 hours to obtain the precursor sol;

[0088] S3. Preparation of precursor thin ...

Embodiment 3

[0092] Preparation of 0.5BiTi by a chemical solution deposition method 0.27 Fe 0.46 Mg 0.27 -0.5LaFeO 3 The method for solid solution thin film, comprises the following steps:

[0093] S1. Preparation of precursor solution: weigh bismuth nitrate pentahydrate, lanthanum nitrate hexahydrate, iron nitrate nonahydrate, tetrabutyl titanate, and magnesium nitrate hexahydrate according to the molar ratio of 1:1:1.46:0.27:0.27, add In the mixed solution of ethylene glycol methyl ether, glacial acetic acid and propionic anhydride with a volume ratio of 15:3:2, stir at room temperature until dissolved to obtain a magnesium-free precursor solution, the concentration of the precursor solution is 0.4 mol / L .

[0094] S2. Prepare the precursor sol: add citric acid to the precursor solution obtained in S1, the concentration of citric acid in the solution is 0.4mol / L, stir at room temperature for more than 12 hours, and let stand for 24 hours to obtain the precursor sol;

[0095] S3. Pre...

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Abstract

The invention relates to a solid solution multiferroic thin film, a preparation method and an electronic device comprising the multiferroic thin film and applied to a 5G storage technology. The thin film is a complex oxide solid solution with a pseudo perovskite structure, and the chemical formula of the thin film is (1-x<1>-x<2>)LM<(1-y) / 2>Fe<y>N<(1-y) / 2>O<3>x<1>Rx<2>Q, wherein y is equal to 0-1, x<1> is equal to 0-1, x<2> is equal to 0-1, and the sum of x<1> and x<2> is less than or equal to 1; L is selected from one or more of Bi, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Y; M and N are respectively selected from Mg, Ti, Hf, Co, Mn, Ni or Zr, and can be the same or different; R is LFeO3; Q is an oxide of L, M and N; and the thin film is a rhombohedral phase and orthorhombic phase solid solution and is polycrystal. The thin film has higher room-temperature electric polarization intensity and lower room-temperature leakage current density.

Description

technical field [0001] The present application relates to the field of multiferroic thin film materials, more specifically, it relates to a solid solution multiferroic thin film, a preparation method, an electronic device containing the multiferroic thin film, and an electronic device containing the multiferroic thin film applied to 5G storage technology. Background technique [0002] At present, 5G communication technology has become increasingly mature. 5G technology can not only improve people's mobile experience, but also change the way many industries operate outside the field of communication. 5G processes data 10 to 100 times faster than 4G, making data generation 10 to 100 times faster. At the same time, with the exponential growth of data volume, the demand for storage capacity of servers has also been greatly increased, and the storage for backup will also be doubled accordingly. Therefore, the emergence of 5G has created a massive storage demand. In the 5G envir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/40C04B35/26C04B35/622C04B35/624G11C11/14G11C11/22
CPCC04B35/2683C04B35/2675C04B35/26C04B35/62222C04B35/624G11C11/14G11C11/22C04B2235/3298C04B2235/3206C04B2235/3227C04B2235/3232C04B2235/663C04B2235/6583C04B2235/656C04B2235/6562C04B2235/6567C04B2235/768C04B2235/95C04B2235/96
Inventor 贾婷婷胡芳方伟于淑会孙蓉
Owner SHENZHEN INST OF ADVANCED TECH
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