Manufacturing method and manufacturing apparatus of fast recovery chip and fast recovery chip

Abstract

The invention discloses a manufacturing method and manufacturing apparatus of a fast recovery chip and a fast recovery chip. The manufacturing method comprises the steps of: carrying out phosphorus diffusion on a silicon wafer through a phosphorus source, so as to form a phosphorus diffusion structure layer on at least one surface of the silicon wafer; removing the phosphorus diffusion structure layer on one surface of the silicon wafer; carrying out boron diffusion on the silicon wafer by using a boron source so as to form a boron diffusion structure layer on one surface, where the phosphorus diffusion structure layer is removed, of the silicon wafer; polishing the surface of the boron diffusion structure layer to form a first polished surface; performing platinum diffusion on the first polished surface by using a platinum source so as to form a platinum diffusion structure layer on the first polished surface; and preparing a fast recovery chip by adopting the silicon wafer subjected to platinum diffusion. The polished surface is formed before platinum diffusion, so that platinum diffusion is more uniform, the original structure of the silicon wafer is prevented from being damaged due to non-uniform platinum distribution, and meanwhile, the recovery characteristic of the chip is improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor electronic components, in particular to a method for manufacturing a fast recovery chip, manufacturing equipment and the fast recovery chip. Background technique [0002] Whether the main circuit in the modern power electronic circuit is a thyristor with commutation shutdown or a new type of power electronic device with self-shutdown capability, a power fast recovery diode connected in parallel with it is required to pass through the reactive power in the load. current, reducing the charging time of the capacitor of the main switching device, and at the same time suppressing the high voltage induced by the parasitic inductance when the load current reverses instantaneously. In recent years, with the continuous advancement of power semiconductor device manufacturing technology, the design and manufacture of new power semiconductor devices such as vertical double-diffused metal-o...

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Problems solved by technology

[0003] The production process of semiconductor chips requires platinum expansion treatment after boron expansion and before GPP production. The configured platinum source needs to be stirred and evenly coated, and then the chips are loaded into boats, put into the furnace, released from the furnace, and cooled. When the chip is diffused in platinum, the phenomenon of uneven diffusion often occurs, which affects the recovery characteristics of the product

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