Magnetization-flipped magnetoelectric coupling device, memory cell, memory array and memory

Abstract

The invention provides a magnetization-flipped magnetoelectric coupling device, a storage unit, a storage array and a memory, and the device comprises a piezoelectric material layer which comprises a piezoelectric material of which the piezoelectric coupling coefficient is higher than a set threshold value; a multiferroic material layer; and an electrode control module which is used for controlling the electric polarization flipping of the piezoelectric material layer through a first electric field and controlling the electric polarization flipping of the multiferroic material layer through a second electric field. According to the invention, a voltage control interface exchange coupling effect and a voltage induced stress transfer effect are combined, non-volatile, high-repeatability and deterministic 180-degree magnetization overturning of electric field control under the condition of no external magnetic field can be realized, and non-volatile, high-repeatability and deterministic 180-degree magnetization overturning with extremely low power consumption can be realized in a pure electrical mode. The device can be combined with various spinning electronic devices to form novel spinning electronic devices such as a magnetoelectric giant magnetoresistance device and a magnetoelectric spinning orbit coupling logic device, and the performance of the device is greatly improved.

Description

technical field [0001] The invention relates to the technical field of spintronics, and more specifically, to a magnetoelectric coupling device for magnetization reversal, a memory unit, a memory array and a memory. Background technique [0002] With the continuous reduction of transistor size, the CMOS process is getting closer and closer to its physical limit, and Moore's Law is gradually coming to an end. In order to continue Moore's law, a spin-based logic device beyond CMOS was proposed and attracted widespread attention. Different from traditional CMOS technology, this technology uses electron spin as a state variable and encodes information according to the direction of the magnetization vector. It has the advantages of simple structure, high integration density, small size and sustainable reduction. [0003] The invention skillfully utilizes the magnetoelectric coupling effect (Magnetoelectric, ME) to realize the regulation and control of the magnetization vector di...

AI Technical Summary

Problems solved by technology

However, the experimental results show that the magnetization control based on multi-domain BFO electrical polarization switching has low reproducibility and is prone to ferroelectric fatigue and magnetization switching failure.

The 90° electrical polarization flip of monodomain BFO can effectively avoid ferroelectric fatigue and improve the repeatability of regulation, but cannot achieve 180° magnetization flip

On the other hand, the control method of voltage-induced stress transfer is highly reproducible, but using this method alone cannot achieve deterministic 180° magnetization switching

Images