3D memory device and manufacturing method thereof

Abstract

The present application discloses a 3D storage device and a manufacturing method thereof. The 3D storage device includes: a substrate; a stacked structure, including a plurality of first dielectric layers and a plurality of spacer layers alternately stacked on the substrate, and the stacked structure including at least a first storage block, a second storage block, and an isolation block located between the first storage block and the second storage block to electrically isolate the first storage block and the second storage block; The direction of the substrate extends to at least cut off the spacer layer on the top layer, wherein the spacer layer in each storage block is a gate conductor layer, and each spacer layer in the spacer block that is not penetrated by the insulating part is a second dielectric layer. The 3D memory device avoids the formation of continuous deep grooves, and penetrates through the top spacer layer in the isolation block through the insulating part, thereby cutting off the connection path between the first memory block and the top spacer layer in the second memory block, preventing the first The storage block and the second storage block are connected to each other.

Description

technical field [0001] The present invention relates to memory technology, and more particularly, to 3D memory devices and manufacturing methods thereof. Background technique [0002] The development direction of semiconductor technology is the reduction of feature size and the improvement of integration. For memory devices, the improvement of storage density is closely related to the progress of semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device is also higher and higher. [0003] In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. The 3D storage device includes a plurality of storage units stacked along the vertical direction, the integration degree can be doubled on a unit area wafer, and the cost can be reduced. [0004] A 3D memory device has multiple memory cell...

AI Technical Summary

Problems solved by technology

If the deep groove is a continuous and long groove, it is not only difficult to etch, but also may cause the collapse of the stacked structure due to the force problem, thus affecting the performance of the 3D memory device

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