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Thin film, preparation method thereof and quantum dot light-emitting diode

A quantum dot luminescence, quantum dot technology, applied in luminescent materials, chemical instruments and methods, nano-optics, etc., can solve the problem of unbalanced carrier injection, affecting device performance, etc., to improve the injection balance, high-speed conduction, improve performance effect

Inactive Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a thin film and its preparation method and quantum dot light-emitting diode, aiming at solving the problem of the existing quantum dot light-emitting diode, which causes the carrier to Imbalanced injection, which ultimately affects the performance of the device

Method used

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  • Thin film, preparation method thereof and quantum dot light-emitting diode
  • Thin film, preparation method thereof and quantum dot light-emitting diode
  • Thin film, preparation method thereof and quantum dot light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Preparation of MOFs composite quantum dot luminescent film with acidic groups bonded to the main frame:

[0071] Provide acidic metal-organic frameworks [(CH 3 ) 2 NH 2 ][Y(C 2 o 4 ) 2 (H 2 O)] 3H 2 The raw material solution of O: Y(NO 3 ) 3 ·6H 2 O (3.83g, 0.01mol) and dimethylamine hydrochloride (2.04g, 0.025mol) were dissolved in 50mL of water, and under stirring, it was added dropwise to oxalic acid (2.52g, 0.02mol) and dimethylamine hydrochloride In 50mL aqueous solution of salt (2.04g, 0.025mol), an acidic MOF [(CH 3 ) 2 NH 2 ][Y(C 2 o 4 ) 2 (H 2 O)] 3H 2 O raw material solution.

[0072] Take 80 μl of the above raw material solution and add it dropwise on the substrate, spin it at 3000rpm for 40s, and finally bake it at 80°C for 30mins to form an acidic metal organic framework layer with a thickness of 20nm.

[0073] Provide the raw material solution of blue luminescent quantum dots (CdSe / ZnS) with toluene as the solvent concentration of 30mg / m...

Embodiment 2

[0075] Preparation of MOFs cavity-loaded benzenesulfonic acid composite quantum dot luminescent film:

[0076] Take 60 mg of zinc oxide powder and add it to 1 ml of formic acid-water solution (including 0.5 ml of formic acid), and then add 0.5 ml of ammonia water to it to obtain a clear solution and form a metal organic framework raw material solution.

[0077] Take 80 μl of the above raw material solution and add it dropwise on the substrate, spin it at 4000rpm for 40s, and then bake it at 80°C for 30mins to form a metal organic framework layer with a thickness of 20nm.

[0078] 100 μl of benzenesulfonic acid was added dropwise on the metal organic framework layer, rotated at 2000rpm for 80s, and then baked at 50°C for 60mins to form a metal organic framework layer loaded with benzenesulfonic acid in the cavity.

[0079] Provide the raw material solution of red luminescent quantum dots (CdSe / Zne) with toluene as the solvent concentration of 30mg / ml, take 50μl of the above raw...

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Abstract

The invention discloses a thin film, a preparation method thereof and a quantum dot light-emitting diode, the thin film comprises a metal organic framework layer and quantum dots embedded in pores of the metal organic framework layer, and acidic ions or acidic molecules are combined in the metal organic framework layer. The film provided by the invention adopts the metal organic framework layer combined with acidic ions or molecules as a supporting structure, and the acidic groups and a main body framework form a dense and strong hydrogen bond network, so that high-speed conduction of protons is realized, transmission of hole carriers is facilitated, injection balance of holes and electrons is improved, and finally, the performance of the quantum dot light-emitting diode is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a quantum dot light-emitting diode and a thin film and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have attracted much attention due to the attractive properties of quantum dots, such as precise Gaussian distribution, tunable emission, and easy solution handling. The traditional method of obtaining a quantum dot light-emitting layer by directly depositing a quantum dot solution on a substrate or a functional layer may lead to unfavorable results such as agglomeration of quantum dots, and this method needs to be optimized. [0003] One of the main intrinsic factors limiting the performance of QLED devices is the brightness quenching of quantum dots, which is caused by the imbalance of carrier injection caused by the large hole injection barrier. [0004] Metal-organic frameworks (MOFs) are porous polymers,...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02H01L51/50B82Y20/00B82Y30/00B82Y40/00C09D187/00
CPCC09K11/883C09K11/025B82Y20/00B82Y30/00B82Y40/00C09D187/00H10K50/115
Inventor 陈开敏
Owner TCL CORPORATION
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