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Intelligent power module

A technology of intelligent power module and circuit wiring, applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problems of high operating temperature of the drive chip, affecting control accuracy and life, and solve the problem of unstable operation and improve reliability and stability, the effect of lowering the temperature

Pending Publication Date: 2021-06-25
GUANGDONG HIIC SEMICON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved in the present invention is to solve the problem that the drive chip of the drive circuit has too high operating temperature to affect its control accuracy and life due to the installation of the power switching device and the drive circuit on the same substrate in the existing IPM module

Method used

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Embodiment Construction

[0029] It should be noted that, under the condition that there is no conflict in structure or function, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below based on examples.

[0030] The present invention proposes an intelligent power module, that is, an IPM module, such as Figure 1 to Figure 6 As shown, the IPM module includes a heat dissipation substrate 311 , an insulating layer 310 , a circuit wiring layer 309 , electronic components, a plurality of pins 303 and a sealing layer 302 .

[0031] The heat dissipation substrate 311 is made of metal material, which includes an upper mounting surface and a lower heat dissipation surface, specifically a rectangular plate made of 1100, 5052 and other aluminum materials. The insulating layer 310 is formed to cover at least one surface of the heat dissipation substrate 311 and is made of a resin material such as epoxy ...

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Abstract

The invention relates to an intelligent power module which comprises a heat dissipation substrate, an insulating layer, a circuit wiring layer, electronic elements, a plurality of pins, a sealing layer and a heat insulation layer, wherein the electronic elements comprise a power device and a driving chip. The heat insulation layer is further arranged between the driving chip and the circuit wiring layer, and the heat conductivity coefficient of the heat insulation layer is lower than that of the insulating layer. Therefore, the heat dissipation substrate can be well prevented from transmitting heat from the power device, the temperature of the driving chip is effectively reduced, the working temperature of the driving chip can be maintained near the room temperature, the problem that a semiconductor element works unstably due to the fact that the temperature of the driving chip is too high is well solved, and thus, the working reliability and stability of the IPM are improved.

Description

technical field [0001] The invention relates to an intelligent power module, which belongs to the technical field of power semiconductor devices. Background technique [0002] Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switching device and the high-voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. The existing IPM module installs the driving circuit and the power switching device on the same substrate. When the IPM module is working, the high temperature generated by the power switching device is transmitted to the driving chip in the driving circuit. As the temperature of the driving chip increases, its driving The electrons and holes in the chip that participate in conduction will rise and be excited to increase significantly, the conductivity will ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L23/488H01L23/498H01L23/31H01L23/367H01L23/373
CPCH01L23/3107H01L23/367H01L23/3736H01L23/488H01L23/49838H01L25/16
Inventor 左安超谢荣才王敏
Owner GUANGDONG HIIC SEMICON LTD
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