Method for growing (100) crystal face beta-phase gallium oxide single crystal by seed crystal deflection angle edge-defined film-fed crystal growth method

A technology of gallium oxide and guided mode method, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of reducing the cost of single crystal growth, the quality of growing crystals, and high heredity, so as to improve quality and increase Effect of crystallization rate and cost reduction

Active Publication Date: 2021-06-18
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004]In view of the prior art guided mode method to grow thick β-Ga2O3 single crystal, due to the mold The inhomogeneity of the temperature before and after the growth leads to quality problems on the front surface of the growing crystal. The present invention provides a seed crystal off-angle guided mode method for growing β-Ga2O3 single crystal The method of deflecting the seed crystal at a certain angle to grow β-Ga2O3, using β-Ga2O 3 During the single crystal growth process, the defects are highly hereditary, and the defects generated on the front surface of the β-Ga2O3 single crystal are discharged, that is, through gallium oxide The crystal direction deflection of the seed crystal improves the quality of the grown crystal, increases the crystallization rate of the (100) crystal plane β-Ga2O3 single crystal grown by the guided mode method, and reduces Single Crystal Growth Cost

Method used

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  • Method for growing (100) crystal face beta-phase gallium oxide single crystal by seed crystal deflection angle edge-defined film-fed crystal growth method
  • Method for growing (100) crystal face beta-phase gallium oxide single crystal by seed crystal deflection angle edge-defined film-fed crystal growth method
  • Method for growing (100) crystal face beta-phase gallium oxide single crystal by seed crystal deflection angle edge-defined film-fed crystal growth method

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Experimental program
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Effect test

Embodiment 1

[0017] In the first step, the mold is placed in β-phase gallium oxide (β-Ga 2 o 3 ) into the iridium crucible for single crystal growth, weigh 200 g of gallium oxide polycrystalline raw material with a purity of 6N, put it into the iridium crucible, put the crucible into the single crystal growth furnace, and direct the [010] crystal to the (100) surface of the seed crystal to [001] The crystal direction is that the axis is deflected 6° counterclockwise, and it is loaded into the top of the iridium crucible of the single crystal growth furnace.

[0018] In the second step, the single crystal growth furnace is evacuated and filled with CO 2 The pressure from the gas to the furnace cavity is 0.100Mpa, and the furnace body is heated up at a speed of 250ºC / h until the gallium oxide raw material is completely melted, and kept for 2 hours, and the seed crystal is slowly placed in the center of the mold until the seed crystal touches the mold, and the bottom of the seed crystal is ...

Embodiment 2

[0022] In the first step, the mold is placed in β-phase gallium oxide (β-Ga 2 o 3 ) into the iridium crucible for single crystal growth, weigh 350 g of gallium oxide polycrystalline raw material with a purity of 6N, put it into the iridium crucible, put the crucible into the single crystal growth furnace, and direct the [010] crystal to the (100) surface of the seed crystal to [001] The crystal direction is that the axis is deflected 5° counterclockwise, and it is loaded into the top of the iridium crucible of the single crystal growth furnace.

[0023] In the second step, the single crystal growth furnace is evacuated and filled with CO 2 The pressure from the gas to the furnace cavity is 0.115Mpa, and the furnace body is heated up at a speed of 300ºC / h until the gallium oxide raw material is completely melted, and kept for 2 hours, and the seed crystal is slowly placed in the center of the mold until the seed crystal touches the mold, and the bottom of the seed crystal is ...

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Abstract

The invention relates to a method for growing (100) crystal face beta-phase gallium oxide single crystal by a seed crystal deflection angle edge-defined film-fed crystal growth method, in particular to a method for growing beta-phase gallium oxide by a certain-angle deflection seed crystal. By utilizing the characteristic of high defect heredity in the beta-phase gallium oxide single crystal growth process, defects generated on the front surface of the beta-phase gallium oxide single crystal are eliminated, namely, through crystal orientation deflection of the gallium oxide seed crystal, the quality of the grown crystal is improved, the crystal forming rate of the (100) crystal face beta-phase gallium oxide single crystal grown by the edge-defined film-fed growth method is improved, and the single crystal growth cost is reduced.

Description

technical field [0001] The invention relates to a method of seed crystal off-angle guided mode growth (100) crystal plane β-phase gallium oxide (β-Ga 2 o 3 ) single crystal method, guided mode method to grow β-Ga 2 o 3 For single crystal, deflect the [010] crystal to the (100) plane of the seed crystal at a certain angle, put it into a single crystal growth furnace, and grow β-Ga 2 o 3 A single crystal belongs to the technical field of single crystal growth. Background technique [0002] Ga 2 o 3 There are 5 kinds of crystal structures, belonging to α, γ, β, δ and ε crystal phases respectively, among which β-Ga 2 o 3 The single crystal is a monoclinic structure, the unit cell parameters a=1.2214nm, b=0.30371nm, c=0.57981nm, β=103.83º, the crystal phase is relatively stable, it has a band gap of 4.8ev, and has high withstand voltage performance , very suitable for optoelectronic devices and high power devices. However, β-Ga 2 o 3 Single crystals have high asymmetr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/34C30B29/16
CPCC30B15/34C30B29/16
Inventor 霍晓青张胜男王新月王健周金杰周传新李宝珠
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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