Method for improving thermal stability and crystallization speed of Sb2Se phase change film

A technology of crystallization speed and thermal stability, applied in the field of microelectronics, which can solve the problems of differential thermal stability and low crystallization temperature

Pending Publication Date: 2021-05-18
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its crystallization temperature is low, thus showing poor thermal stability

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  • Method for improving thermal stability and crystallization speed of Sb2Se phase change film
  • Method for improving thermal stability and crystallization speed of Sb2Se phase change film
  • Method for improving thermal stability and crystallization speed of Sb2Se phase change film

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Embodiment Construction

[0018] The method of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0019] 1. Specific steps

[0020] The preparation method is: use high-purity round block VO 2 and Sb 2 Se materials are used as targets. Use a magnetron sputtering device, use high-purity Ar gas as the working gas, and use SiO 2 / Si(100) is the substrate material for surface area deposition, the specific steps are as follows:

[0021] Step (1) respectively in Sb 2 Se round target and VO 2 The back of the round target is completely attached to a circular copper sheet with the same diameter as the target, and the thickness of the copper sheet is about 1mm to obtain a magnetron sputtering coating target; 2 The target is installed in a DC sputtering target, and the Sb 2 Se installed in the RF sputtering target;

[0022] Step (2) SiO 2 Put the / Si(100) substrate into deionized water and ultrasonically clean it for 15 minutes, then put ...

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Abstract

The invention discloses a method for improving thermal stability and crystallization speed of a Sb2Se phase change film. Firstly, a SiO2 / Si (100) substrate serves as a substrate, coating is conducted at the room temperature through a magnetron sputtering device, Sb2Se thin films with different thicknesses are obtained by controlling time, sputtering is conducted on the Sb2Se thin films through a direct current VO2 target, and the Sb2Se phase change thin film material with a VO2 covering layer is obtained. According to the method, the Sb2Se thin film is covered with the VO2 thin film through the VO2 target material, the Sb2Se thin film covered with the VO2 thin film has better thermal stability, better data retention capacity and higher crystallization rate, the phase change performance of the Sb2Se thin film can be effectively improved, the thermal stability of the Sb2Se thin film can be effectively improved, and the crystallization rate of the Sb2Se thin film can be effectively increased, especially for the Sb2Se thin film with the small thickness.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, aims at the current non-volatile semiconductor storage technology, proposes a candidate phase-change material with relatively excellent performance, and proposes a method for optimizing the performance of the phase-change material. Background technique [0002] As one of the most potential next-generation non-volatile semiconductor storage technologies, phase-change memory (PCM) has attracted widespread attention because of its outstanding scalability, high storage density, and good compatibility with CMOS. advantage. Ge-Sb-Te ternary PCM is the most widely studied phase change material, but there are still some problems to be solved. Ge 2 Sb 2 Te 5 (GST)'s low crystallization temperature and insufficient data retention capability limit its commercial widespread. High melting point and large RESET current hinder PCM size reduction because nanotransistors cannot provide sufficient dr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C23C14/06C23C14/08C23C14/35C23C14/54
CPCC23C14/35C23C14/0623C23C14/083C23C14/54H10N70/8825H10N70/883H10N70/8828H10N70/026
Inventor 颜成钢王涛张继勇孙垚棋张勇东
Owner HANGZHOU DIANZI UNIV
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