Silicon carbide single crystal growth method

A silicon carbide single and growth method technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem that carbon is not fully utilized, achieve the effect of reducing production cost and increasing nitrogen doping concentration

Active Publication Date: 2021-04-30
北京利宝生科技有限公司
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  • Claims
  • Application Information

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Problems solved by technology

However, for the growth of silicon carbide crystals on the silicon surface, after the silicon atoms are detached from the initial surface of the silicon and then added back to the original position, the carbon atoms detached from the surface are difficult to fill back to the original position again, so the carbon replaced by nitrogen atoms underutilized

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  • Silicon carbide single crystal growth method
  • Silicon carbide single crystal growth method
  • Silicon carbide single crystal growth method

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Embodiment Construction

[0021] The invention discloses a method for growing a silicon carbide single crystal, which comprises the following steps:

[0022] Step 1. Perform the first heat treatment on the silicon carbide powder; the conditions for the first heat treatment are: temperature 2030±25° C., pressure 500±50 torr, and treatment time 3±0.25 hours.

[0023] Step 2, adding 1wt%-2wt% silicon powder to the silicon carbide powder treated in step 1, so as to increase the silicon content in the silicon carbide powder.

[0024] Step 3. The silicon / silicon carbide powder obtained in step 2 is subjected to a second heat treatment to eliminate excess silicon carbide metal. The temperature of the second heat treatment is different from the temperature of the first heat treatment, and the conditions of the heat treatment are: temperature 1800±25°C, pressure 500±50 torr, and treatment time 3±0.25 hours.

[0025] Step 4. Use the silicon / silicon carbide powder treated in step 3 as the growth source, and use ...

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Abstract

The invention relates to a growth method of silicon carbide single crystals. The method comprises the following steps: carrying out primary heat treatment on silicon carbide powder, adding a certain amount of silicon powder, carrying out secondary heat treatment, and carrying out silicon carbide single crystal growth by using silicon / silicon carbide powder as a source material. The method is characterized in that silicon / silicon carbide powder is subjected to heat treatment, so that the proportion of silicon is effectively increased, and the nitrogen doping concentration of the silicon carbide single crystal is further increased.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for growing a silicon carbide single crystal. Background technique [0002] Silicon carbide single crystal is a suitable material for realizing high-power, high-frequency and high-temperature devices. Controlling the doping concentration of silicon carbide single crystal and epitaxial layer growth is very important for carbon carbide semiconductor devices. Carbon carbide substrates with high crystalline quality and high conductivity are one of the most important prerequisites for low-resistivity applications in power electronics and optoelectronic devices. [0003] At present, silicon carbide single crystals are generally grown by sublimation methods, and nitrogen-doped 6H-silicon carbide single crystals are completed by adjusting the change of nitrogen flow rate. Studies have proved that the nitrogen concentration in the carbon crystal plane of silicon carbide cry...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/00
Inventor 徐洙莹金宰年叶宏伦钟其龙刘崇志
Owner 北京利宝生科技有限公司
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