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Lead zirconate titanate film for next-generation high-speed communication and preparation method and application thereof

A technology of lead zirconate titanate and high-speed communication, which is applied in the direction of coating, etc., can solve the problems of expensive equipment, limited application, harsh conditions, etc., and achieve the effect of easy adjustment of film thickness and size, huge application prospects, and high transparency

Active Publication Date: 2021-04-30
聚合电光(杭州)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The equipment used in the solid phase method is generally expensive, the atomic ratio is difficult to control, the quality of the film depends heavily on the target material, and the size of the film is limited; the preparation process of the hydrothermal method is cumbersome and the conditions are harsh
There are certain limitations in practical applications
At present, most PZT thin film seed layers use metal platinum and titanium. Because of their absorption of light, their application in the field of electro-optic is severely limited, and it is difficult to prepare lead titanate (PT) as the seed layer with a dominant orientation. single-phase crystal film, it is difficult to obtain the electro-optic effect

Method used

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  • Lead zirconate titanate film for next-generation high-speed communication and preparation method and application thereof
  • Lead zirconate titanate film for next-generation high-speed communication and preparation method and application thereof
  • Lead zirconate titanate film for next-generation high-speed communication and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] (1) Rinse the glass substrate with deionized water, then ultrasonically clean it with acetone, deionized water, and isopropanol for 10 minutes, and then dry it in a drying oven at 85°C for use;

[0048] (2) dissolving lanthanum nitrate in n-propanol solution to obtain a concentration of 0.02mol / L seed layer solution, sealed for use;

[0049] (3) Press Pb 1.0 Zr 0.2 Ti 0.8 o 3 Atomic ratio, lead acetate trihydrate is dissolved in diethylene glycol methyl ether to obtain lead acetate solution; then tetraethyl titanate is pressed by Pb 1.0 Zr 0.2 Ti 0.8 o 3 The atomic ratio is added dropwise in the lead acetate solution, and then press Pb 1.0 Zr 0.2 Ti 0.8 o 3The atomic ratio of zirconium isopropoxide solution was added dropwise, and stirred evenly; finally, 0.5% acetylacetone was added dropwise as a chelating agent, and fully stirred to obtain a chelated precursor solution; the concentration was 0.04mol / L, sealed and left standing, stand-by;

[0050] (4) The a...

Embodiment 2

[0053] (1) Soak the sapphire substrate in concentrated sulfuric acid, rinse it with deionized water, then ultrasonically clean it with acetone, deionized water, and isopropanol for 10 minutes, then dry it in a drying oven at 85°C for use;

[0054] (2) neodymium nitrate is dissolved in ethylene glycol methyl ether solution, and the obtained concentration is 0.04mol / L neodymium nitrate seed layer solution, stand-by;

[0055] (3) Press Pb 1.1 Zr0. 65 Ti 0.35 o 3 Atomic ratio, lead acetate trihydrate is dissolved in ethylene glycol methyl ether, lead acetate solution; then isobutyl titanate is pressed by Pb 1.1 Zr0. 65 Ti 0.35 o 3 The atomic ratio is added dropwise to the lead acetate solution, and then press Pb 1.1 Zr0. 65 Ti 0.35 o 3 The atomic ratio of zirconium n-propoxide solution was added dropwise, and stirred evenly; finally, acetylacetone with a volume ratio of 2% was added dropwise as a chelating agent, and fully stirred to obtain a chelated PZT precursor solut...

Embodiment 3

[0059] (1) Rinse the glass substrate with deionized water, then ultrasonically clean it with acetone, deionized water, and isopropanol for 10 minutes, and then dry it in a drying oven at 85°C for use;

[0060] (2) dissolving praseodymium nitrate in ethylene glycol methyl ether solution to obtain a concentration of 0.1mol / L seed layer solution, sealed for use;

[0061] (3) Press Pb 1.2 Zr 0.52 Ti 0.48 o 3 Atomic ratio, lead acetate trihydrate is dissolved in ethylene glycol methyl ether to obtain lead acetate solution; then isopropyl titanate is pressed by Pb 1.2 Zr 0.52 Ti 0.48 o 3 The atomic ratio is added dropwise in the lead acetate solution, and then press Pb 1.2 Zr 0.52 Ti 0.48 o 3 The atomic ratio of zirconium isopropoxide solution was added dropwise, and stirred evenly; finally, a total of 5% acetylacetone was added dropwise as a chelating agent, and fully stirred to obtain a chelated precursor solution; the concentration was 0.4mol / L, sealed and left standing...

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Abstract

The invention discloses a lead zirconate titanate film for next-generation high-speed communication and a preparation method and application thereof. The material of the device is based on a lanthanide nitrate seed crystal layer, a lead zirconate titanate precursor solution is prepared by a sol-gel method, a PZT crystal film is prepared by spin coating and annealing, and the perovskite type PZT single-phase crystal film with uniform and compact structure and dominant orientation can be obtained. The method is simple in operation, low in energy consumption and low in cost, the grown film is a pure perovskite type single-phase crystal film, the transparency is high, the film is resistant to high temperature, the thickness and the size of the film are easy to adjust, and the requirements of various electro-optical modulation devices can be met. The film lead zirconate titanate prepared by the method has a nonlinear effect, an electro-optical effect, a piezoelectric effect, a thermoelectric effect and the like, and can be used for preparing devices such as an optical waveguide, an optical switch, a beam splitter / combiner, a piezoelectric modulator, a thermoelectric modulator, an electro-optical modulator and the like in an integrated photon loop.

Description

technical field [0001] The invention relates to the field of integrated photonic communication, in particular to a lead zirconate titanate thin film for next-generation high-speed communication, a preparation method and application thereof. Background technique [0002] Lead zirconate titanate (PZT) is a multifunctional material with large piezoelectric and electro-optic coefficients, high dielectric constant and significant remanent polarization, showing its potential in piezoelectric, electro-optic and pyroelectric, etc. excellent performance. Therefore, lead zirconate titanate has a wide range of applications in many fields such as sensors, micro-electromechanical systems, electro-optic modulators, and ferroelectric memories. However, it has always been a great challenge to prepare dense and uniform, crack-free, highly transparent, and high electro-optic effect PZT crystal thin films, especially the preparation of thin films that can be used in electro-optic modulators h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C03C17/25C03C17/27C04B41/87
CPCC03C17/22C03C17/25C03C17/27C04B41/5042C04B41/87C04B41/009C03C2218/116C03C2218/32C04B35/10C04B41/4535C04B41/0072
Inventor 邱枫班大赛
Owner 聚合电光(杭州)科技有限公司
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