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A kind of large size LED chip and its manufacturing method

A technology of LED chip and manufacturing method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of loss of light output in the transparent conductive layer, and the inability to make the P-type semiconductor layer thick, etc., and achieve the effect of a stable and reliable chip structure

Active Publication Date: 2022-01-28
XIAMEN CHANGELIGHT CO LTD
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AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a large-size LED chip and its manufacturing method to solve the problem that the P-type semiconductor layer in the large-size LED chip cannot be made thick and the transparent conductive layer will lose light.

Method used

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  • A kind of large size LED chip and its manufacturing method
  • A kind of large size LED chip and its manufacturing method
  • A kind of large size LED chip and its manufacturing method

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Embodiment Construction

[0049] In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0050] Such as figure 1 As shown, a large-size LED chip includes:

[0051] substrate1;

[0052] The epitaxial stack 2 located on the surface of the substrate 1, the epitaxial stack 2 at least includes a first N-type semiconductor layer 2.1, an active layer 2.2, and a P-type semiconductor layer 2.3 stacked in sequence along a first direction; the first direction is perpendicular to the substrate 1, and from the substrate 1 to the epitaxial stack 2;

[0053] a tunneling junction 3, the tunneling junction 3 is disposed on the surf...

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Abstract

The present invention provides a large-size LED chip and a manufacturing method thereof. Tunneling junctions and several current spreading composite layers are arranged on the surface of the epitaxial stack facing away from the substrate, wherein the current spreading composite layers Layers are stacked on the surface of one side of the tunnel junction away from the epitaxial stack, and each of the current spreading composite layers includes a second N-type semiconductor layer and an ohmic contact layer stacked in sequence along the first direction; the current spreading The composite layer has a first through hole, the first through hole penetrates from the ohmic contact layer of the top layer to part of the first N-type semiconductor layer, and exposes part of the surface of the first N-type semiconductor layer; the P A tunneling effect is formed between the N-type semiconductor layer and the bottommost second N-type semiconductor layer. In this way, the transparent conductive layer of the traditional structure is replaced by the epitaxial material layer (that is, the N-type semiconductor layer), and a stable and reliable chip structure can be better realized while ensuring its current spreading effect.

Description

technical field [0001] The invention relates to the field of light emitting diodes, in particular to a large-size LED chip and a manufacturing method thereof. Background technique [0002] With the rapid development of light-emitting diodes, the application of LEDs is changing with each passing day; the market demand for light-emitting diodes is getting higher and higher, making the size of LED chips larger and larger. At the same time, due to the problem of poor current expansion effect caused by large-size chips, the LED chip structure is continuously improved and optimized; currently, large-size chips usually use an extended electrode structure combined with a transparent conductive layer, and the transparent conductive layer (such as ITO and other conductive metal oxides) as a P-type ohmic contact layer, so that the current can be better spread in a large-area chip. [0003] However, although the transparent conductive layer has high light transmittance after high-tempe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/36H01L33/00
CPCH01L33/14H01L33/36H01L33/005
Inventor 林志伟陈凯轩蔡建九曲晓东赵斌
Owner XIAMEN CHANGELIGHT CO LTD
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