Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nano quantum dot light-emitting diode based on self-assembled submicron spheres and method

A technology of nanometer quantum dots and light-emitting diodes, which is used in the fields of technology, optics, and light guides for producing decorative surface effects. It can solve the problems of insufficient density and small enough quantum dot light-emitting diodes, and achieve the effect of simple preparation methods

Active Publication Date: 2021-04-09
FUZHOU UNIV
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the object of the present invention is to provide a nano-quantum dot light-emitting diode and method based on self-assembled submicron spheres, so as to solve the problem that the existing quantum dot light-emitting diodes are not small enough and not dense enough

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano quantum dot light-emitting diode based on self-assembled submicron spheres and method
  • Nano quantum dot light-emitting diode based on self-assembled submicron spheres and method
  • Nano quantum dot light-emitting diode based on self-assembled submicron spheres and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0035] Please refer to image 3 , the present invention provides a nano-quantum dot light-emitting diode based on self-assembled submicron spheres, including a substrate, an anode layer, an insulating layer, a pixel Bank array, a hole injection layer, a hole transport layer, and a quantum dot that are sequentially arranged from bottom to top. Light emitting layer, electron transport layer and cathode layer.

[0036] In this embodiment, ITO or IZO is used for the anode layer.

[0037] In this embodiment, the material used for the insulating layer pixel Bank array includes but not limited to polymers or metal oxides, the polymers include but not limited to one of polyvinylpyrrolidone and polymethyl methacrylate, and the metal oxides include But not limited to silica, alumina.

[0038] In this embodiment, the material used for the hole injection layer i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a nano quantum dot light-emitting diode based on self-assembled submicron spheres and a method. The nano quantum dot light-emitting diode comprises a substrate, an anode layer, an insulating layer pixel Bank array, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer which are sequentially arranged from bottom to top. According to the nano quantum dot light-emitting diode based on the self-assembled submicron spheres, the problem that an existing quantum dot light emitting diode is not small enough and not dense enough is solved.

Description

technical field [0001] The invention relates to the field of preparation of quantum dot light-emitting diodes, in particular to a nano-quantum dot light-emitting diode based on self-assembled submicron spheres and a method thereof. Background technique [0002] Quantum dots have attracted the attention of many researchers because of their low cost and high energy efficiency. In addition, due to their high color purity and compatibility with printing process preparation, quantum dots have become a popular material for new light-emitting diodes. This will be One of the important research directions in the field of display in the future. [0003] Today's high-PPI display devices are developing rapidly. The higher the PPI value, the higher the density of the display, the better the image quality, and it also lays a solid foundation for 3D display. However, in order to obtain a higher PPI, the pixels need to be as small and dense as possible. This problem needs to be solved urge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/00B81B7/04B81C1/00H10K99/00
CPCB81B7/04B81C1/00031B81C1/00349H10K71/00H10K50/115
Inventor 李福山赵等临胡海龙郭太良
Owner FUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com