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Method for optimizing magnetic performance of cobalt-based thin film inductance material by utilizing active metal oxide

A technology of active metals and oxides, applied in the application of magnetic films to substrates, manufacturing of inductors/transformers/magnets, circuits, etc., can solve problems such as limiting the coercive force of CoZrTa thin films, and achieve increased range and controllability Sexuality, convenient control, and strong liveliness

Active Publication Date: 2021-03-16
广东麦格智芯精密仪器有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the research work is to adjust the magnetic properties of CoZrTa by choosing covalent oxides as the barrier interlayer [J.Appl.Phys.98(2006)08F109; J.Appl.Phys.113(2013)17A343; AIP Advances 7(2017)056414], the selection of a single barrier layer type greatly limits the ability to adjust the coercivity of CoZrTa thin films

Method used

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  • Method for optimizing magnetic performance of cobalt-based thin film inductance material by utilizing active metal oxide
  • Method for optimizing magnetic performance of cobalt-based thin film inductance material by utilizing active metal oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] S1. Clean the surface of the CoZrTa target, the specific cleaning process is as follows:

[0034] (1) Ultrasonic cleaning with acetone alcohol;

[0035] (2) Ultrasonic cleaning with deionized water;

[0036] (3) Finally blow dry by nitrogen.

[0037] S2. Using the magnetron sputtering method, deposit CoZrTa and MgO sequentially on the silicon substrate to form a CoZrTa / MgO structure; first the CoZrTa target is bombarded for 2 minutes and 50 seconds, and then the MgO target is bombarded for 7 minutes and 48 seconds. Bottom vacuum 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0038] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment. The process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature is 250°C, and the holding time is 30 minutes.

Embodiment 2

[0047] S1. Clean the surface of the CoZrTa target, the specific cleaning process is as follows:

[0048] (1) Ultrasonic cleaning with acetone alcohol;

[0049] (2) Ultrasonic cleaning with deionized water;

[0050] (3) Finally blow dry by nitrogen.

[0051] S2. Using the magnetron sputtering method, sequentially deposit CoZrTa and HfO on the silicon substrate 2 , forming CoZrTa / HfO 2 Structure; first CoZrTa target bombardment for 3 minutes, then HfO 2 The target is bombarded for 3 minutes and 1 second, and the background vacuum of the sputtering chamber is 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0052] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment. The process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature is 250°C, and the holding time is 30 minutes.

Embodiment 3

[0064] S1. Clean the surface of the CoZrTaB target, the specific cleaning process is as follows:

[0065] (1) Ultrasonic cleaning with acetone alcohol;

[0066] (2) Ultrasonic cleaning with deionized water;

[0067] (3) Finally blow dry by nitrogen.

[0068] S2. Using the magnetron sputtering method, sequentially deposit CoZrTaB and HfO on the silicon substrate 2 , forming CoZrTaB / HfO 2 Structure; first CoZrTaB target bombardment for 3 minutes and 7 seconds, then HfO 2 The target is bombarded for 3 minutes and 1 second, and the background vacuum of the sputtering chamber is 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0069] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment. The process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature is 250°C, and the holding time is 30 minutes.

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Abstract

The invention discloses a method for optimizing the magnetic performance of a cobalt-based thin film inductance material by utilizing active metal oxide, and belongs to the technical field of information storage and inductance. According to the invention, the ionic oxide formed by active metal is selected as a barrier layer, and the control of the soft magnetic performance of the film is realizedby adopting the orbital hybridization engineering, so that the beneficial and moderate Co-O orbital hybridization state is obtained, and the magnetic performance of the ferromagnetic film material isoptimized. The ionic oxide is low in chemical bond energy and high in activity, and compared with Al metal, more active metal Hf or Mg can capture O from Co more easily, so that the interface oxidation state shows different degrees of oxygen deficiency, oxygen adaptation and peroxidation, the adjustment range is widened, the controllability is improved, the CoO orbital hybridization state can be properly changed, and the stability of the catalyst is improved. The method has the advantages of simple process, convenience in control, high efficiency, low cost and the like, and is suitable for being applied to future information storage and inductance technologies.

Description

technical field [0001] The invention belongs to the technical field of information storage and inductance, and specifically relates to a method for regulating the Co-based soft magnetic / non-magnetic interface structure by selecting ionic active metal oxides, thereby optimizing the magnetic performance of the soft magnetic film. Background technique [0002] In recent years, with the rapid development of electronic information technology, the arrival of the 5G era not only provides great convenience for people's production and life, such as the application of smart home, unmanned driving, wearable devices, etc., but also makes the receiving equipment of information terminals welcome With the huge innovation coming, higher requirements are put forward for the performance, reliability, miniaturization and energy saving of advanced electronic components such as magnetic sensors, inductors and transformers. Therefore, it is necessary to continuously improve the soft magnetic prop...

Claims

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Application Information

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IPC IPC(8): H01F41/18H01F41/22
CPCH01F41/18H01F41/183H01F41/22
Inventor 徐秀兰于广华冯春
Owner 广东麦格智芯精密仪器有限公司
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