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Silicon carbide wafer, crystal ingot and preparation method thereof

A silicon carbide single crystal and silicon carbide technology, which is applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the complex influencing factors, incomplete silicon carbide single crystal, and silicon carbide single crystal growth quality conditions. Advanced problems, to achieve the effect of simple control method, less quantity and uniform resistivity

Active Publication Date: 2022-07-12
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the quality requirements for silicon carbide single crystal growth are high, and the influencing factors are complex. The understanding of the defects of silicon carbide single crystals is still in an incomplete stage, and the quality of silicon carbide single crystals is important to the manufactured devices and needs to be continuously improved. The quality of silicon carbide single wafers to ensure the quality of fabricated devices

Method used

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  • Silicon carbide wafer, crystal ingot and preparation method thereof
  • Silicon carbide wafer, crystal ingot and preparation method thereof
  • Silicon carbide wafer, crystal ingot and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] refer to figure 1 , the sidewall of the crucible is provided with a nitrogen channel 6, the nitrogen channel 6 is arranged in the sidewall of the crucible and extends around the inner cavity of the crucible, and the inner sidewall of the nitrogen channel is less dense than the outer sidewall of the nitrogen channel.

[0075] As an embodiment, the crucible 2 includes a lining 21 and an outer shell 22, the sidewall of the crucible forms a nitrogen gas channel 6, the nitrogen gas channel 6 is a spiral channel, the spiral channel extends spirally around the inner cavity of the crucible along the axial direction of the crucible, and the nitrogen gas channel is at the bottom of the crucible. and the top at least once. For example, the nitrogen gas channel extends from the gas inlet 71 at the bottom of the crucible to the top of the crucible and then extends to the bottom of the crucible to form the gas outlet 72 .

[0076] Specifically, the inner liner 21 and the outer shell...

Embodiment 2

[0079] refer to figure 1 , according to an embodiment of the present application, a method for preparing a silicon carbide single crystal ingot using the crucible of Example 1 includes the following steps:

[0080] 1) Preparation of silicon carbide single crystal ingot:

[0081] The crucible with the nitrogen gas channel of Example 1 is provided, the nitrogen gas channel is arranged in the sidewall of the crucible and extends around the inner cavity of the crucible, and the inner sidewall of the nitrogen gas channel is less dense than the outer sidewall of the nitrogen gas channel;

[0082] The silicon carbide seed crystal 1 is placed on the top of the crucible 2 and the silicon carbide raw material 3 is placed on the bottom of the crucible 2, the crucible 2 is assembled with a heat preservation structure and placed in the crystal growth furnace 10, and the induction coil 5 is used for heating;

[0083] The temperature controller 12 controls the temperature of the crystal gro...

Embodiment 3

[0091] Example 3 Preparation of Silicon Carbide Single Crystal Ingot 1#

[0092] The preparation method of silicon carbide single crystal ingot 1# comprises the following steps:

[0093] The crucible with the nitrogen gas channel of Example 1 is provided, the nitrogen gas channel is arranged in the side wall of the crucible and extends around the inner cavity of the crucible, and the inner wall density of the nitrogen gas channel is 1.70 g / cm 3 , the density of the shell is 1.90g / cm 3 ;

[0094] The silicon carbide seed crystal is placed on the top of the crucible and the silicon carbide powder is placed on the bottom of the crucible, and the heat preservation structure is assembled outside the crucible and sealed in the crystal growth furnace;

[0095] Control the temperature and pressure of the crystal growth furnace and the flow of argon gas into the crystal growth furnace to clean and remove impurities in the crystal growth furnace;

[0096] Heating stage: adjust the te...

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Abstract

The application relates to a silicon carbide wafer, a crystal ingot and a preparation method thereof, belonging to the field of semiconductor materials. The silicon carbide single wafer contains nitrogen, and the silicon carbide single wafer has no more than 50 hexagonal color spots, and the sides forming the hexagonal color spots are perpendicular to the <10-10> direction, and each hexagonal color spot The number of cavities contained in the edges is not more than 10. The present application finds that a novel defect existing in a nitrogen-containing silicon carbide wafer is a hexagonal color spot and a void defect existing on the hexagonal color spot, and the hexagonal color spot will make the resistivity of the silicon carbide wafer non-uniform, Seriously affect the electrical properties of semiconductor devices made of silicon carbide wafers, such as making devices made on silicon carbide wafers fail; the existence of voids not only affects the performance of silicon carbide wafers such as breakdown field strength, but the voids may extend to carbonization. A device made from a single wafer of silicon as a substrate. The present application provides a silicon carbide wafer and a silicon carbide ingot containing hexagonal color spots and a small number of voids.

Description

technical field [0001] The application relates to a silicon carbide wafer, an ingot and a preparation method thereof, and belongs to the field of semiconductor materials. Background technique [0002] Silicon carbide single crystal is one of the most important third-generation semiconductor materials. It is widely used in power electronics, power electronics, and power electronics due to its large band gap, high saturation electron mobility, strong breakdown field, and high thermal conductivity. RF devices, optoelectronic devices and other fields. At present, the main preparation method of SiC single crystal is physical vapor transport (PVT) method, which is also the most successful method for growing large-diameter SiC crystals so far. It is mainly to recrystallize and grow SiC crystals by transporting the gas phase source generated by the sublimation of silicon carbide raw materials at high temperature to the seed crystal. [0003] Currently mature SiC devices include: s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36H01L29/06H01L29/16
CPCC30B29/36C30B23/00H01L29/06H01L29/1608Y02P70/50
Inventor 方帅高宇晗高超石志强杨世兴宗艳民
Owner SICC CO LTD
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