Method for separating and analyzing impurities in NF3

A technology for separating analysis and impurities, which is applied in the field of analytical chemistry, can solve the problems of destroying and protecting the detector, and achieve the effects of protecting the detector, short analysis time and remarkable separation effect

Active Publication Date: 2021-03-12
北京高麦克仪器科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A large number of NF3 into the detector will destroy the protection detector, there is no NF 3 Related reports on separation and analysis methods of impurities in

Method used

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  • Method for separating and analyzing impurities in NF3
  • Method for separating and analyzing impurities in NF3
  • Method for separating and analyzing impurities in NF3

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] NF 3 Separation and analysis method of impurities in medium:

[0035] Column temperature: 70 degrees

[0036] Detector temperature: 40 degrees

[0037] Column flow: 25ml / min

[0038] Type of carrier gas: through Ultra-high purity helium after purifier

[0039] Injection volume: 1ml

[0040] Analytical instruments use Gaomai's 592 / 816 series instruments to separate O 2 +Ar,N 2 , CO is separated by 6 feet 1 / 8 SC-ST+8 feet 1 / 8 13X molecular sieve, which can effectively separate NF 3 Pull away from the previously analyzed impurities, and then choose the appropriate time to backflush or cut, the NF 3 Drain from pre-column. Analyze CF 4 , CO 2 , N 2 O. SF 6 15 feet 1 / 8 haysep N and 20 feet 1 / 8 haysep N are used. Choosing this column can maximize CF 4 with NF 3 for separation, the CF 4 At the moment when the peak and tail of the peak fall, switch the column selection valve and set the NF 3 Drain, column 1 into the detector, to prevent a large amount of NF 3 ...

Embodiment 2

[0044] The method according to claim 1, characterized in that, determine the oxidizability of NF3 by the following method to investigate its damage to the detector:

[0045] S1, pass NF3 into the container containing reducing agent solution protected by inert gas;

[0046] S2, control the temperature in the container to be 25, 30, 35, 40, 45, 50, 55, 60°C respectively; keep it for a period of time, flush 2-3 times the volume of the container with inert gas to drive away NF3, and investigate the reducing agent solution Oxidation;

[0047] S3, estimate the oxidation coefficient of NF3 by the following formula:

[0048]

[0049] Wherein, a and b are constants, Ci is the amount of feeding NF3, and Ti is the temperature;

[0050]S4, take the oxidized condition of the reducing agent solution measured in S3 to calculate the constant in the formula of S5; group the obtained constants from high to low, the difference within the group is not significant, and the difference between ...

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PUM

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Abstract

The invention discloses a method for separating and analyzing impurities in NF3, which adopts gas chromatography with double blowback or double cutting systems, takes high-purity helium as carrier gas, configures a helium discharge ionization detector, and comprises the step of emptying main components by using a blowback switching valve after the impurities flow out of a pre-column. According tothe method for separating and analyzing the impurities in the NF3, the impurities are separated, the analysis time is short, and the separation effect is remarkable. A large amount of NF3 can be prevented from entering the detector, and the detector is effectively protected.

Description

technical field [0001] The invention belongs to the technical field of analytical chemistry and relates to a NF 3 Separation and analysis method of impurities in medium. Background technique [0002] Nitrogen trifluoride (nitrogen trifluoride) chemical formula NF3, an excellent plasma etching gas in the electronics industry, for etching silicon and silicon nitride, nitrogen trifluoride is used to mix carbon tetrafluoride and carbon tetrafluoride with oxygen The gas has a higher etching rate and selectivity, and has no pollution to the surface, especially in the etching of integrated circuit materials with a thickness of less than 1.5um. Nitrogen trifluoride has a very excellent etching rate and selectivity. It leaves no residue on the surface and is a very good cleaner at the same time. With the development of nanotechnology and the large-scale development of technology in the electronics industry, its demand will increase day by day. [0003] As demand increases, NF 3 T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N30/02G01N30/64
CPCG01N30/02G01N30/64Y02E30/30
Inventor 牛艳东刘丽娜何涛
Owner 北京高麦克仪器科技有限公司
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