RC-IGBT device with collector polysilicon electronic channel

An electronic channel and collector technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of hindering electron movement and long turn-off time, and achieve the effect of eliminating the snapback effect.

Active Publication Date: 2021-03-09
CHONGQING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, N-collector, P-collector and channel oxide hinder the movement of electrons, making the off time very long

Method used

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  • RC-IGBT device with collector polysilicon electronic channel
  • RC-IGBT device with collector polysilicon electronic channel
  • RC-IGBT device with collector polysilicon electronic channel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as figure 2 As shown, a preferred RC-IGBT device with a collector polysilicon electron channel in the embodiment of the present invention includes a set top semiconductor region: emitter 1, N+ electron emitter 2, gate 3, gate oxide layer 4, P+ Emitter 5, P-body 6, N-type drift region 7; collector region includes from left to right: buffer layer 8, P+ hole region 9, metal collector 10, N-collector 11, n-type polysilicon 12, P Type electron blocking layer 13.

[0041] The P-type electron blocking layer 13 is located on the right side of the P+ hole region 9 and has a distance L from the right edge of the device. The upper surface of the n-type polysilicon is in contact with the N-collector 11, the P+ hole region 9, the P-type electron blocking layer 13, and the buffer layer 8 respectively from left to right.

[0042] The P+ hole region 9 is flush with the lower surface of the N-collector 11 , and the rest of the N-collector 11 is completely covered by the P+ hole ...

Embodiment 2

[0047] Such as image 3 As shown, a preferred RC-IGBT device with a collector polysilicon electron channel in the embodiment of the present invention, on the basis of Embodiment 1, the P-type electron blocking layer 13 is moved upward, so that the P-type electron blocking layer 13 is left The side is adjacent to the P+ hole region 9, the right side is a certain distance from the right edge of the device, and the lower surface is also a certain distance from the upper surface of the n-type polysilicon 12. The P-type electron blocking layer 13 has a length of 22 μm, a thickness of 1.5 μm, and a doping concentration of 1×10 17 cm -3 .

Embodiment 3

[0049] Such as Figure 4 As shown, an RC-IGBT device with a collector polysilicon electronic channel is preferred in the embodiment of the present invention. On the basis of Embodiment 1, the drift region is replaced by alternately arranged P-type and N-type columns to form a super junction structure , The superjunction power device drift region is composed of mutually stacked and overlapping P-type and N-type doped columns, which extend from the drift region to the anode and cathode, and the height of these columns is consistent with the thickness of the drift region. The P-type electron blocking layer 13 has a length of 22 μm, a thickness of 1.5 μm, and a doping concentration of 1×10 17 cm -3 .

[0050] With the help of MEDICI simulation software, the figure 1 The conventional RC-IGBT shown, figure 2 An RC-IGBT with a polysilicon electronic channel is shown, Figure 6 shown in the AB RC-IGBT and Figure 7 The FPL RC-IGBT shown is simulated for comparison. During the ...

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Abstract

The invention relates to an RC-IGBT device with a collector polysilicon electronic channel, and belongs to the technical field of semiconductors. The device has the following three characteristics: (1) a P collector region of a traditional RC-IGBT is divided into two sections, namely a high-concentration P + hole region and a low-concentration P-type electron blocking layer; and (2) an N + collector is arranged in the high-concentration P + hole region. And (3) an N-type polycrystalline silicon layer is introducedto the bottom of the collector. During forward conduction, the short-circuit resistance RCS of the collector can be changed by adjusting the doping of the polycrystalline silicon layer and the P-type electron blocking layer, so that the snapback effect is completely eliminated; during turn-off, the polycrystalline silicon layer can rapidly extract electrons, so that the turn-off loss is effectively reduced; and simulation results show that compared with a TRC RC-IGBT, the device completely eliminates the snapback effect during forward conduction, and the turn-off loss Eoff of the device is reduced by 59% when the forward conduction voltage drop is 2.8 V.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to an RC-IGBT device with a collector polysilicon electron channel. Background technique [0002] Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) has gradually become a power electronics technology due to its advantages of high input impedance, low control power, simple drive circuit, fast switching speed, low conduction voltage, large on-state current, and low loss. It is one of the core devices and is widely used in various power electronic equipment. However, in most IGBT application circuits, it is necessary to connect the IGBT and a diode in antiparallel for freewheeling. This is because the IGBT does not have a body diode like a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). When working in the reverse direction, it can only be equivalent to a non-conductive open-base PNP transistor. In order to reduce manufacturing costs and redu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/08
CPCH01L29/7395H01L29/0834Y02B70/10
Inventor 陈伟中林徐葳李顺黄垚贺利军黄义
Owner CHONGQING UNIV OF POSTS & TELECOMM
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