A Y-shaped grid structure based on carbon-based materials and its preparation method

Abstract

The invention discloses a Y-shaped grid structure based on carbon-based materials, including a substrate of a carbon-based material channel layer, on which there is an integrated grid metal structure composed of a grid metal grid root and a grid metal grid cap, There is a first high-K gate dielectric layer between the gate metal structure and the carbon-based material channel layer, the lower part of the gate metal cap has a first width, and the upper part has a width greater than or equal to the first width. In the second width, two side surfaces are formed between the upper part and the lower part of the gate metal cap, and the second high-K gate dielectric layer is coated on the side surfaces respectively. At the same time, the preparation method of the Y-shaped gate structure is also proposed, which can form a self-aligned Y-shaped gate structure with only one exposure, and the process is simple and the operation is convenient. The Y-shaped gate structure based on carbon-based materials proposed by the present invention can further reduce parasitic effects while reducing gate resistance, and can improve the performance of carbon-based high-speed and high-frequency devices.

Description

technical field [0001] The invention relates to the technical field of transistor electronic device preparation, in particular to a carbon-based material-based Y-shaped gate structure and a preparation method thereof. Background technique [0002] Carbon-based electronic materials represented by three-dimensional material diamond, two-dimensional material graphene and quasi-one-dimensional material carbon nanotubes have ultra-wide bandgap, ultra-high carrier mobility, excellent thermal conductivity and mechanical properties, respectively. As well as the various quantum effects brought by the unique low-dimensional structure, it has great potential in the fields of radio frequency high-power, high-linearity, terahertz and photoelectric mixing devices. With the development of carbon-based radio frequency devices, the existing experimental results show that the performance of carbon-based radio frequency devices is still lagging behind theoretical expectations due to limitation...

AI Technical Summary

Problems solved by technology

T-gate devices have two structures, one is the gate-first self-aligned structure, its disadvantage is that the length of the channel defined by the self-aligned source-drain electrodes depends on the length of the gate cap, so in a long gate cap (larger Under the design of gate cap cross-sectional area and smaller gate resistance), short-channel transistors cannot be fabricated, and short channels are necessary for RF devices

The second is the gate-last non-self-aligned structure. Through two exposures, the complexity of the process is increased. Although the former problem can be solved, the distance between the source-drain electrode and the gate is reduced, thereby increasing the device size. Parasitic effects, which are detrimental to the high frequency performance of the device

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