Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-cost high-efficiency solar cell and preparation method thereof

A solar cell, low-cost technology, applied in the field of solar cells, can solve the problems of thick polysilicon film, affect passivation performance, low content, etc., achieve the effects of good conductivity, ensure passivation, and reduce passivation loss

Inactive Publication Date: 2021-02-23
RISEN ENERGY
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its low content in the earth's crust, the price is relatively high; and the silver paste often needs to corrode a part of the silicon through the glass frit to form an ohmic contact, so the polysilicon film is required to be relatively thick
At the same time, the silver paste corrodes the passivation layer and polysilicon, causing the J0 of this area to be higher than that of the non-metal contact area, thus affecting the passivation performance of this area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-cost high-efficiency solar cell and preparation method thereof
  • Low-cost high-efficiency solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] see figure 1 , the low-cost high-efficiency solar cell in the present invention includes a substrate 1, and the substrate 1 is an N-type substrate,

[0047] The diffusion layer 2 located on the upper surface of the substrate, the diffusion layer 2 is an n+ layer,

[0048] The passivation layer 3 located on the upper surface of the diffusion layer, the passivation layer 3 is a stack of silicon oxide / silicon nitride,

[0049] a silicon oxide layer 4 located on the lower surface of the substrate,

[0050] The doped polysilicon layer 5 located on the lower surface of the silicon oxide layer is a p+ polysilicon layer.

[0051] The hydrogenated transparent conductive film 6 located on the lower surface of the doped polysilicon layer, the hydrogenated transparent conductive film 6 is selected from AZO:H.

[0052] As well as the upper electrode 7 located on the upper surface of the passivation layer and the lower electrode 8 located on the lower surface of the hydrogenated t...

Embodiment 2

[0064] see figure 1 , the low-cost high-efficiency solar cell in the present invention includes a substrate 1, and the substrate 1 is an N-type substrate,

[0065] The diffusion layer 2 located on the upper surface of the substrate, the diffusion layer 2 is a p+ layer,

[0066] The passivation layer 3 located on the upper surface of the diffusion layer, the passivation layer 3 is a stack of silicon oxide / aluminum oxide / silicon nitride,

[0067] a silicon oxide layer 4 located on the lower surface of the substrate,

[0068] The doped polysilicon layer 5 located on the lower surface of the silicon oxide layer, the doped polysilicon layer 5 is an n+ polysilicon layer,

[0069] The hydrogenated transparent conductive film 6 located on the lower surface of the doped polysilicon layer, the hydrogenated transparent conductive film 6 is selected from AZO:H.

[0070] And the upper electrode 7 located on the upper surface of the passivation layer and the lower electrode 8 located on ...

Embodiment 3

[0082] see figure 1 , the low-cost high-efficiency solar cell in the present invention includes a substrate 1, and the substrate 1 is an N-type substrate,

[0083] The diffusion layer 2 located on the upper surface of the substrate, the diffusion layer 2 is a p+ layer,

[0084] The passivation layer 3 located on the upper surface of the diffusion layer, the passivation layer 3 is a stack of silicon oxide / aluminum oxide / silicon nitride,

[0085] a silicon oxide layer 4 located on the lower surface of the substrate,

[0086] The doped polysilicon layer 5 located on the lower surface of the silicon oxide layer, the doped polysilicon layer 5 is an n+ polysilicon layer,

[0087] The hydrogenated transparent conductive film 6 located on the lower surface of the doped polysilicon layer, the hydrogenated transparent conductive film 6 is 10:H.

[0088] And the upper electrode 7 located on the upper surface of the passivation layer and the lower electrode 8 located on the lower surfa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of solar cells, in particular to a low-cost high-efficiency solar cell and a preparation method thereof, and the solar cell comprises a substrate, a diffusion layer located on the upper surface of the substrate, a passivation layer located on the upper surface of the diffusion layer, a silicon oxide layer located on the lower surface of the substrate, adoped polycrystalline silicon layer located on the lower surface of the silicon oxide layer, a hydrogenated transparent conductive film positioned on the lower surface of the doped polycrystalline silicon layer, an upper electrode positioned on the upper surface of the passivation layer, and a lower electrode positioned on the lower surface of the hydrogenated transparent conductive film. According to the invention, a passivation layer on the surface of polycrystalline silicon is replaced by the hydrogenated TCO thin film, the TCO thin film has good electrical properties and can form good ohmic contact with the slurry, and the slurry does not need to be burnt through to be in contact with the polycrystalline silicon, so that non-burnt-through slurry such as aluminum slurry can be adoptedto replace silver slurry, and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a low-cost high-efficiency solar cell and a preparation method thereof. Background technique [0002] The passivated contact cell is a new type of high conversion efficiency cell, and the conversion efficiency can reach 24%. It has good compatibility with conventional production lines, and can be upgraded in N-type conventional production lines. Compared with heterojunction cells and back-junction cells, passivated contact cells have a relatively simple structure, are highly feasible for mass production, and have certain advantages in production costs. At present, this type of battery uses silver paste to achieve metallization. Silver has the advantages of good conductivity, low work function, good solderability, and is not easy to form deep level defects in silicon. However, due to its low content in the earth's crust, the price is relatively high; and the silver paste oft...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/068H01L31/18
CPCH01L31/02167H01L31/0682H01L31/1804H01L31/1868Y02P70/50
Inventor 胡玉婷万义茂袁声召于元元杨斌庄宇峰张文超
Owner RISEN ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com