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Non-volatile static storage unit, control method, component and equipment

A non-volatile storage and static storage technology, which is applied in the field of memory to achieve the effects of improving efficiency, fast operation speed, and low static power consumption

Pending Publication Date: 2021-02-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The embodiment of the application itself solves the problem of a large DC (Direct Current, DC) short-circuit current at the storage node in the prior art through a non-volatile static storage unit, and reduces power consumption

Method used

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  • Non-volatile static storage unit, control method, component and equipment
  • Non-volatile static storage unit, control method, component and equipment
  • Non-volatile static storage unit, control method, component and equipment

Examples

Experimental program
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Embodiment 1

[0055] Such as figure 1 As shown, a storage unit based on a 7T1C structure, wherein the storage unit is an NVSRAM unit, including: a static storage module and a non-volatile storage module; the non-volatile storage module is a 1T1C structure, and the static storage module is 6T structure; the static storage module is used to read and store data 0 or 1, the non-volatile storage module is connected to the first storage node QB of the static storage module, and the static storage module is powered off When the static storage module is powered on, the data on the static storage module is stored, and when the static storage module is powered on, the non-volatile storage module restores the data to the static storage module.

[0056] is an optional embodiment, such as figure 1 As shown, the 1T1C structure includes: a switching element M7 and a ferroelectric memory FeRAM; the gate of the switching element M7 is connected to the switch control word line FSWL, and one end of the sourc...

Embodiment 2

[0067] Such as figure 2 As shown, this embodiment provides a control method for storing data, including:

[0068] Step S201: In response to the power-off operation of the storage unit, the 1T1C structure is applied with a positive pulse voltage, and the data 1 or 0 stored in the first storage node of the 6T structure is stored in the 1T1C structure;

[0069] Step S202: In response to the power-on operation of the memory cell, the 1T1C structure is applied with a positive pulse voltage, the data 1 or 0 stored in the 1T1C structure is restored to the 6T structure, and the 1T1C structure enters a floating state.

[0070] It should be noted that the ferroelectric memory FeRAM in the 1T1C structure, due to its own polarization characteristics, makes it accelerate electrons due to the effect of the polarization electric field when the memory cell of the present invention is in the storage mode and recovery mode. Motion, which makes storage and recovery faster. The non-volatile st...

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Abstract

The invention discloses a non-volatile static storage unit and a control method thereof, the storage unit comprises: a nonvolatile storage module, whereinthe nonvolatile storage module comprises a switch component and a ferroelectric memory, one end of the ferroelectric memory is connected with the switch component, and the other end of the ferroelectric memory is connected with a control line; and a static storage module, wherein a storage node of the static storage module is connected with the ferroelectric memory through the switch component; before the static storage module is powered off,the switch component is switched on, and pulse voltage is input through the control line to store data of the storage node into the ferroelectric memory; and after the static storage module is powered on, the switch component is switched on, pulse voltage is input through the control line, and the data is recovered to the storage node from the ferroelectric memory.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a non-volatile static storage unit, a control method, components and equipment. Background technique [0002] Energy-saving chips (which can be applied to wearable devices and Internet of Things devices, etc.) use Static random access memory (SRAM) for calculation, but after the power is turned off, the stored data will disappear, so the data stored in the static memory is volatile. When the power of a static memory is turned on or off, the initial data must be written or written out of the non-volatile memory (Non-volatile memory, NVM), and the non-volatile memory (Non-volatile memory, NVM) is used for interrupting Electric storage, so the non-volatile static storage unit composed of the non-volatile storage unit and the static storage unit can reduce the standby current. [0003] At present, a variety of non-volatile static memory cells have been developed using Magnetic Tunne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22G11C16/24
CPCG11C11/22G11C11/2295G11C11/2275G11C16/24
Inventor 杨建国刘超吕杭炳刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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