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A method for assembling quantum dot lasers on planar superlattice nanowires

A superlattice and nanowire technology, applied in the field of semiconductor devices, can solve the problem that colloidal quantum dots cannot be positioned accurately, and achieve the effect of expanding the scope of application

Active Publication Date: 2021-12-17
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the colloidal quantum dots prepared by this method cannot be positioned accurately, and scanning probes are needed

Method used

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  • A method for assembling quantum dot lasers on planar superlattice nanowires
  • A method for assembling quantum dot lasers on planar superlattice nanowires

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Embodiment Construction

[0027] The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.

[0028] Such as figure 1 As shown, this embodiment provides a method for assembling a quantum dot laser on a planar superlattice nanowire, which specifically includes the following steps:

[0029] 1) Deposit a layer of insulating medium after pretreatment of the substrate material

[0030] Such as figure 1 (a), figure 1 As shown in (b): the substrate in this embodiment can be crystalline silicon, glass, aluminum foil, silicon nitride, silicon oxide, silicon carbide, sapphire, PI (polyimide) or PET (polyterephthalic acid) Plastic), using PECVD or PVD process to deposit a layer of 200~1000nm thick insulating dielectric layer.

[0031] Preferably, in this embodiment, a layer of insulating dielectric layer with a thickness of 200-600 nm is deposited, and the material of the insulating dielectric layer is silicon oxide or silicon nitride.

[003...

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Abstract

The invention discloses a method for assembling a quantum dot laser on a planar superlattice nanowire, which includes spin-coating a quantum dot solution on the etched superlattice nanowire, and drying to obtain a supercrystal embedded with quantum dots Lattice nanowires; the quantum dots embedded in the superlattice nanowires are irradiated with ultraviolet light or infrared light, and then the quantum dots emit light. The silicon nanowires at both ends of the superlattice structure serve as optical waveguides, and the quantum dots are positioned and transmitted by the waveguide effect of the nanowires. Signal, to test the collection and transmission of light by the nanowires of the superlattice structure.

Description

technical field [0001] The invention relates to a method for assembling a quantum dot laser on a plane superlattice nanowire, belonging to the technical field of semiconductor devices. Background technique [0002] Semiconductor nanowires are key building blocks for developing next-generation high-performance micro-nanoelectronic logic, sensing, and display applications. In order to be more compatible with the planar electronic process and realize positioning integration, the inventors of the present application proposed a method for controlling the growth morphology and composition of planar silicon germanium and related nanowires supplied by heterogeneous stacked amorphous films : Among them, a composite laminated amorphous silicon and amorphous germanium layer is used as the precursor supply layer, and the amorphous layer is absorbed by low-melting metal indium and tin nanoparticles to directly grow germanium-silicon heterogeneous self-nested nanowires on a planar substra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34H01S5/20H01S5/30B82Y30/00B82Y40/00
CPCH01S5/3412H01S5/3018H01S5/20B82Y40/00B82Y30/00H01S2304/00
Inventor 余林蔚刘帅帅王军转
Owner NANJING UNIV
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