Method for testing volume expansion coefficient of irregular or micro-scale crystal material

A technology of volume expansion coefficient and crystal materials, which is applied to the analysis of materials, material analysis using radiation diffraction, material analysis using wave/particle radiation, etc., can solve the problems of limited test objects and difficult realization of micro-scale material samples, etc. Achieve low sample requirements, solve the problem of difficult detection of expansion coefficient and strong application value

Pending Publication Date: 2021-02-05
CHINA ACADEMY OF SPACE TECHNOLOGY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still many problems in the volume expansion test: the test object is limited to standard rods, and the contact surface must be flat or circular with a large radius, which is extremely difficult to achieve for irregular samples and micro-scale material samples

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for testing volume expansion coefficient of irregular or micro-scale crystal material
  • Method for testing volume expansion coefficient of irregular or micro-scale crystal material
  • Method for testing volume expansion coefficient of irregular or micro-scale crystal material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0090] For solder joint materials, the coefficient of thermal expansion is used as the basic data for thermal stress and strain analysis, simulation, and structural design. When the expansion coefficients of the packaging materials are different, especially when the expansion coefficients differ greatly (Δα>5×10 -6 ℃ -1 ), the temperature alternation will cause the package as a whole to be subjected to severe thermal stress shocks. When the strength of the package solder joints is low, the continuous thermal stress shock will cause cracks in the solder joints, resulting in thermal mismatch problems. For example, the fatigue damage caused by the thermal expansion coefficient mismatch between the solder and the pin material will lead to local cracking of the pin solder; Overall expansion mismatch. In this part, Sn metal solder (Sn [wt%] above 98.6%) is selected for thermal expansion coefficient test and analysis.

[0091] 1) X-ray diffraction spectrum collection

[0092]Use...

Embodiment 2

[0104] PbSn solder is still the most reliable soldering material and is widely used in aerospace, ships, weapons and other fields. As mentioned above, its welding reliability largely depends on the matching of thermal expansion coefficient. PbSn solder balls (specification: micro-scale, diameter 250 μm. Composition: Pb [wt%] = 36.8%, Sn [wt%] = 63.2%) were selected for thermal expansion coefficient test and analysis. To exemplify materials in various phases.

[0105] 1) X-ray diffraction spectrum collection

[0106] Use X-ray diffractometer to collect diffraction spectra at different temperatures, tube voltage: 40kV, tube current: 30mA, Cu K α Radiation, scan step size and speed were set to 0.02° and 0.5° / min, respectively. The test temperature settings include: 25°C, 50°C, 75°C, and 100°C. The XRD patterns obtained at different temperatures are as follows: Figure 4 shown.

[0107] 2) Calculation of lattice constant

[0108] Analysis of the XRD spectrum shows that the c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of material detection, and particularly relates to a method for testing the volume expansion coefficient of an irregular or micro-scale crystal material. According to the method, the volume expansion coefficient alpha V of the material is further calculated by collecting the XRD diffraction pattern of the material at different temperatures and calculating the expansion coefficient of each phase lattice constant. Volume expansion coefficient of irregular and micro-scale samples can be measured, and the irregular and micro-scale samples comprise micro-components, thin film materials, leads for components, solders and other materials. The method has the characteristics of low sample requirements, simple operation and high characterization efficiency. The method also solves the problems that the coefficient of thermal expansion of irregular and micro-scale materials is not easy to detect, and has high application value.

Description

technical field [0001] The invention belongs to the technical field of material detection, and in particular relates to a method for testing the expansion coefficient of irregular or micro-scale crystal materials, where the irregular shape refers to a non-standard rod. Background technique [0002] In the environment of alternating temperature, the material will produce obvious phenomenon of thermal expansion and contraction, which is common in nature. But this phenomenon may have some serious consequences, it will affect the accuracy of precision parts, for example, the thermal expansion and contraction of materials will cause a serious loss of satellite camera accuracy; it will affect the molding quality of materials, for example, metal forging, rolling In the process of manufacturing or extrusion, due to the influence of temperature changes, residual stress and deformation are introduced, and in the worst case, crack-type defects will be formed; it will also cause relativ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N23/2055
CPCG01N23/20G01N2223/056G01N2223/1016
Inventor 何端鹏高鸿李岩邢焰于翔天汪洋王向轲吴冰刘泊天张静静陆平孔静
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap