Method for analyzing domain and domain wall movement of hafnium oxide-based ferroelectric film under ultrafast electric pulse

Abstract

The invention relates to a method for analyzing domain and domain wall movement of a hafnium oxide-based ferroelectric film under ultrafast electric pulse, which comprises the following steps of: respectively constructing a force field equation, a polarization field equation and an electric field equation of the hafnium oxide-based ferroelectric film with preset thickness to obtain a hafnium oxide-based ferroelectric film model, wherein in the force field equation and the polarization field equation, the duration time of the force field and the duration time of the polarization field are the same and are both 0.1-100 nanoseconds; respectively deducing a weak form of the output field equation, a weak form of the polarization field equation and a weak form of the electric field equation; solving the weak form of the force field equation, the weak form of the polarization field equation and the weak form of the electric field equation to obtain domain structures in the ferroelectric filmat different moments; and according to the domain structures in the ferroelectric film at different moments, obtaining a change curve of the domain wall along with time. The correlation between the ultrafast electric pulse amplitude and duration and the hafnium oxide-based ferroelectric film retention performance and wake up effect is obtained through analysis, and guidance is provided for optimization of the macroscopic performance of the hafnium oxide-based ferroelectric film.

Description

technical field [0001] The invention relates to the field of ferroelectric thin films and memory technology, in particular to an analysis method for domain and domain wall motion in hafnium oxide-based ferroelectric thin films under ultrafast electric pulses. Background technique [0002] Hafnium oxide-based ferroelectric thin film is a new type of ferroelectric material, which is compatible with advanced CMOS technology; at the same time, when its film thickness is less than 10nm, it still has good ferroelectricity. These advantages make hafnium oxide-based ferroelectric thin films an ideal choice for future non-volatile memory materials, and have attracted close attention from researchers. However, the hafnium oxide-based ferroelectric thin film also has the defects of "wake-up" effect and insufficient fatigue resistance, resulting in poor reliability of the hafnium oxide-based ferroelectric thin film. [0003] The ferroelectric domain transition of hafnium oxide-based fe...

AI Technical Summary

Problems solved by technology

However, the phase field models proposed by current researchers are mainly based on traditional ferroelectric thin film materials, and they still have the following shortcomings: 1) They cannot capture the dynamic response of ferroelectric phase and domain wall under the action of ultrafast pulsed electric field

Since these models ignore the inertia and momentum of domain evolution, they cannot properly describe the dynamics of ferroelectric domain flipping under ultrafast pulsed electrical loading with periods less than 100 ns

2) It is impossible to analyze the coexistence state of ferroelectric phase and non-ferroelectric phase and its temporal and spatial evolution

The traditional perovskite ferroelectric thin film phase field model is based on the continuous distribution of ferroelectric phases in perovskite ferroelectric materials, so it is not suitable for analyzing the evolution of ferroelectric phases in hafnium oxide-based ferroelectric thin films where multiple phases coexist.

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