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A finishing process for large-size single crystals and a preparation process for large-size single crystals

A large-scale, single-crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of prolonging the closing time, reducing the utilization rate of effective production hours, increasing the risk of single crystal breakage, etc. The effect of increasing single crystal production capacity, improving single crystal closing time, and ensuring the quality of property rights

Active Publication Date: 2021-07-30
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For the finishing of large-sized single crystals with a diameter of 240-310mm, if the current finishing technology of "high temperature and low pulling speed" is still used, there will be the following problems: due to the increase in the diameter of the single crystal, the finishing temperature must be further increased. This will increase the risk of single crystal failure
If the finishing temperature is not increased, it will inevitably lead to the extension of the finishing time, which will lead to a decrease in the utilization rate of effective output man-hours

Method used

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  • A finishing process for large-size single crystals and a preparation process for large-size single crystals

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The single crystal diameter is 240m, and the Czochralski single crystal furnace is Jingsheng 105s.

[0031] The first stage: when the equal diameter is completed, the thermal field temperature is 1231sp, the single crystal pulling speed is 83mm / hr, the heater power is 67kW, and the crucible rotation speed is 10r / min.

[0032] In this stage, the temperature of the stable thermal field remains unchanged at 1231sp, the heater power remains unchanged at 67kW and the crucible rotation speed is kept at 10r / min; at the same time, the single crystal pulling speed is increased, and the single crystal pulling speed is slowly increased within 0.3h. Speed, then quickly increase the single crystal pulling speed to 90mm / hr within 0.6h, then stabilize the single crystal pulling speed for 0.1h, and finally complete the finishing work of the first stage within 1h.

[0033] At the end of the first stage, the diameter of the single crystal ends up being 110mm and the length of the end is ...

Embodiment 2

[0038] The single crystal diameter is 280m, and the Czochralski single crystal furnace is Jingsheng 105s.

[0039] The first stage: when the equal diameter is completed, the temperature of the thermal field is 1219sp, the single crystal pulling speed is 80mm / hr, the heater power is 64.5kW, and the crucible rotation speed is 10r / min.

[0040] In this stage, the temperature of the stable thermal field remains unchanged at 1219sp, and the power of the heater remains unchanged at 64.5kW at this time, and the rotation speed of the crucible is kept at 10r / min; at the same time, the pulling speed of the single crystal is increased, and the single crystal is slowly raised within 0.3h Pulling speed, quickly increase the single crystal pulling speed to 95mm / hr within 0.5h, then stabilize the single crystal pulling speed for 0.1h, and finally complete the finishing work of the first stage within 0.9h.

[0041] At the end of the first stage, the diameter of the single crystal ends up bein...

Embodiment 3

[0046] The single crystal diameter is 310m, and the Czochralski single crystal furnace is Jingsheng 105s.

[0047] The first stage: when the equal diameter is completed, the thermal field temperature is 1205sp, the single crystal pulling speed is 77mm / hr, the heater power is 63kW, and the crucible rotation speed is 10r / min.

[0048] In this stage, the temperature of the stable thermal field remains unchanged at 1205sp, the power of the heater remains unchanged at 63kW and the crucible rotation speed is kept at 10r / min; at the same time, the single crystal pulling speed is increased, and the single crystal pulling speed is slowly increased within 0.3h. Speed, then quickly increase the single crystal pulling speed to 98mm / hr within 0.4h, and then stabilize the single crystal pulling speed for 0.3h, and finally complete the finishing work of the first stage within 1h.

[0049] At the end of the first stage, the diameter of the single crystal ends up being 150mm and the length of ...

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Abstract

The present invention provides a finishing process for large-sized single crystals. After equal-diameter growth is completed, S1 is sequentially included: stabilizing the temperature of the thermal field, increasing the pulling speed of the single crystal stepwise and keeping the rotation speed of the crucible constant, so that the diameter of the single crystal is reduced to Lower than the equal diameter; S2: Rapidly increase the heater power to increase the temperature of the thermal field, and reduce the rotation speed of the crucible, and at the same time perform a stepwise reduction in the single crystal pulling speed in the S1, and the single crystal pulling speed is reduced After a certain speed, keep it constant until the end of the tail. Using the finishing process of the present invention can complete the finishing and tipping of large-sized single crystals within 2 hours, which solves the problem of low growth efficiency in the existing finishing process, and does not cause broken buds, crystallization or dislocation, etc., ensuring property rights Quality, increase single crystal production capacity. The invention also discloses a preparation process of large-size single crystal.

Description

technical field [0001] The invention belongs to the technical field of accessories used in a Czochralski silicon single crystal furnace, and in particular relates to a finishing process of a large-size single crystal and a preparation process of a large-size single crystal. Background technique [0002] The Czochralski single crystal growth process mainly includes dismantling, melting, welding, temperature stabilization, seeding, shoulder expansion, shoulder turning, equal diameter, finishing, and furnace shutdown. The purpose of finishing is to reduce the generation of dislocations caused by the thermal stress when the single crystal leaves the liquid surface. Most of the small-sized single crystals (diameter<240mm) are finished in the "high temperature and low pulling speed" method. The purpose of high temperature is to reduce the risk of tail crystallization , The low casting speed is matched with the high temperature, so as to avoid the reverse of the dislocation caus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 郭谦张文霞高润飞王林徐强霍志强韩凯武志军郭志荣
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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