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Solar cell diffusion deep junction preparation method

A solar cell, deep junction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as the concentration difference in the PN junction area, increase the phosphorus concentration difference in the junction area, improve Uoc and FF, and improve battery conversion efficiency. Effect

Inactive Publication Date: 2021-01-01
山西潞阳光伏科技有限公司
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AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is: how to improve the PN junction depth and junction concentration difference by optimizing the diffusion process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Use the cleaning texture process to remove the damaged layer of the silicon wafer and prepare the anti-reflection texture.

[0020] A layer of SiO2 was prepared on the surface of the silicon wafer using a diffusion furnace with an oxygen flow rate of 600 sccm, a nitrogen flow rate of 700 sccm, a time of 300 s, a pressure of 100 mbar, and a reaction temperature of 780 °C.

[0021] Deposit a constant impurity phosphorus source on the surface of the silicon wafer, the first deposition: small nitrogen flow rate 800sccm, nitrogen flow rate 600sccm, oxygen flow rate 500sccm, time 200s, pressure 100mbar, reaction temperature 790°C; second deposition temperature 800°C, other conditions Same as the 1st deposition. Remarks: Small nitrogen is the carrying gas of PClO3.

[0022] The phosphorus atoms produced by the reaction are pushed into the silicon wafer to form a PN junction. The temperature is 865°C, the nitrogen flow rate is 1500 sccm, the pressure is 100 mbar, and the time...

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Abstract

The invention relates to the field of solar cell production. The invention discloses a method for preparing a solar cell diffusion deep junction. The method comprises the following steps of: 1, preparing a SiO2 layer; 2, preparing a constant impurity phosphorus source on the surface of the silicon wafer through twice deposition; 3, pushing phosphorus atoms into the silicon wafer to form a PN junction; 4, carrying out supplementary diffusion; 5, preparing a rear oxide layer; and 6, depositing an impurity phosphorus source on the surface of the silicon wafer again. The antireflection suede is prepared before the first step. The method has the beneficial effects that under the condition of not changing the overall sheet resistance and the process time, the PN junction depth and the junction region phosphorus concentration difference are effectively increased, and the Uoc and the FF of the battery piece are improved, so that the battery conversion efficiency is improved.

Description

technical field [0001] The invention relates to the field of solar cell production. Background technique [0002] The diffusion process refers to doping phosphorus atoms in the P-type silicon wafer through a high-temperature diffusion furnace to form a PN junction. At present, the diffusion process is mainly a shallow junction process. The advantage is that the short-wave response is good, and the short-circuit current of the battery can be increased. The disadvantage is that there will be a part of the current loss after the module is made, and the CTM value of the module is low. With the continuous improvement of the raw material silicon wafer technology, the minority carrier life of the silicon wafer is getting better and better, and it is no longer a problem to increase the short-circuit current of the battery. Therefore, it is necessary to optimize the diffusion process, increase the depth of the PN junction and the concentration difference of the junction region, so a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352
CPCH01L31/03529H01L31/1804Y02E10/547Y02P70/50
Inventor 赵树宝张青董洋
Owner 山西潞阳光伏科技有限公司
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