Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vertical Resonant Cavity Surface Emitting Laser Diode (VCSEL) with Multiple Current Confinement Layers

A technology that emits laser light and resonant cavity. It is used in lasers, laser parts, semiconductor lasers, etc. It can solve problems such as large power loss and limited detection distance, and achieve improved sensing distance, low power consumption, and power conversion efficiency. Enhanced effect

Active Publication Date: 2022-07-19
VISUAL PHOTONICS EPITAXY
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, although a single active layer combined with a single current confinement layer can improve the power conversion efficiency of VCSEL, the detection distance of devices using VCSEL is still limited and the power loss is still large, which is not compatible with future LiDAR, AR, VR, dTOF or handheld or portable There is a gap between the power conversion efficiency of the light source required by electronic devices and the light output power

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical Resonant Cavity Surface Emitting Laser Diode (VCSEL) with Multiple Current Confinement Layers
  • Vertical Resonant Cavity Surface Emitting Laser Diode (VCSEL) with Multiple Current Confinement Layers
  • Vertical Resonant Cavity Surface Emitting Laser Diode (VCSEL) with Multiple Current Confinement Layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] exist Figure 1a , Figure 1b and Figure 1c In terms of the main structure, the first current confinement layer 51 with the first through holes 510 is disposed on the active region 1, and the tunnel junction layer 31 and the second current confinement layer 53 with the second through holes 530 are disposed Between the first active layer 11 and the second active layer 13 in the active region 1 , the tunnel junction layer is interposed between the first current confinement layer 51 and the second current confinement layer 53 .

[0079] according to Figure 1a structure, since the tunnel junction layer 31 , the second current confinement layer 53 and the first active layer 11 are sequentially under the second active layer 13 , in this configuration, if the current flows from the first through hole 510 and Flow into the first active layer 11 through the second through hole 530, the epitaxial layer above the first current confinement layer 51 is mainly composed of a P-type...

Embodiment 2

[0091] like Figure 3a As shown, the VCSEL includes three current confinement layers 51, 53, 55 and two active layers 11, 13, wherein the via areas of the three current confinement layers 51, 53, 55 are not equal to each other, the first via hole, the second via hole and the The size of the through hole area of ​​the third through hole is respectively small, medium and large. The structure shown in FIG. 3a is only an example, and the relationship between the through hole areas of the first through hole, the second through hole and the third through hole It can be large, medium, small or small, medium, medium or various other suitable combinations. Preferably, the through hole area ratio between the first through hole and the second through hole, between the second through hole and the third through hole, or between the third through hole and the first through hole is between 0.2-5, 0.3-3.3, 0.5-2, 0.54-1.85 or 0.6-1.6, wherein the specific through-hole area ratio is 0.5, 0.6,...

Embodiment 3

[0094] In the case where the VCSEL includes three current confinement layers or even more current confinement layers, if the area of ​​some vias or vias is large enough, that is, the sum of the resistance values ​​of the current confinement layers is not too large, some vias Or in addition to the areas of the through holes that may not be equal to each other, some or both or each of the through holes may also be approximately equal or close to each other.

[0095] by Figure 3b For example, if the minimum through hole area among the first through hole, the second through hole and the third through hole is greater than 30 μm 2 (40μm 2 / 50μm 2 ), the three can even be equal to each other; in principle, as long as the sum of the resistance values ​​of the current confinement layers does not significantly affect the power conversion efficiency of the VCSEL, one (some) of the current confinement layers can also be tolerated. The via area is less than 30µm 2 , 40μm 2 or 50μm 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a vertical resonant cavity surface emitting laser diode (VCSEL) with multiple current confinement layers, that is, a VCSEL with multiple current confinement layers. Generally, a tunnel junction layer needs to be arranged between the two active layers to allow the current from One active layer flows into the other active layer, but the tunneling junction layer will cause the current to diverge seriously in one active layer, making it difficult for the current in the other active layer to be confined to the desired area. A current confinement layer with carrier and light confinement functions is provided between, so that the carrier or light confinement effect of the active layer above and / or below the current confinement layer can be improved, which is helpful to improve the optoelectronic properties of the VCSEL Compared with the existing VCSEL, the VCSEL with multiple current confinement layers can significantly improve the optical power, slope efficiency and power conversion efficiency of the VCSEL.

Description

technical field [0001] A vertical resonant cavity surface emitting laser diode with multiple current confinement layers, particularly a vertical resonant cavity surface emitting laser diode with current confinement layers in an active region, wherein the active region includes multiple active layers. Background technique [0002] Laser light sources such as vertical resonant cavity surface emitting laser diodes (VCSELs) are now commonly used as light sources for 3D sensing or optical communication. In the light source application of sensing or optical communication, it can save more power or reduce the chip area to reduce the cost. In addition, the application of VCSEL can also be extended to light detection and ranging (LiDAR), virtual reality (Virtual Reality, VR) ), Augmented Reality (AR), dTOF (Direct Time-of-Flight) sensors or other applications. [0003] The main feature of a VCSEL is that it emits light substantially perpendicular to the surface of its chip. VCSELs ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183
CPCH01S5/18308H01S5/1833H01S5/18311H01S5/3095H01S5/18383H01S5/0014H01S5/18358H01S5/18305
Inventor 黄朝兴金宇中戴文长
Owner VISUAL PHOTONICS EPITAXY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com