Solar cell and manufacturing method

Abstract

The embodiment of the invention provides a solar cell and a manufacturing method, the solar cell comprises a first sub-cell, a first tunneling junction layer, a second sub-cell, a second tunneling junction layer, a third sub-cell and a metamorphic buffer layer located between the first tunneling junction layer and the second sub-cell, the first sub-cell, the first tunneling junction layer, the second sub-cell, the second tunneling junction layer, the third sub-cell and the metamorphic buffer layer are laminated and the metamorphic buffer layer contains Sb atoms. Sb atoms have the effect of a surfactant, so that the migration capability of reaction atoms on the surface of the metamorphic buffer layer can be improved, the lowest energy point of atom nucleation in the metamorphic buffer layercan be found, and the stress and dislocation generated by lattice mismatch existing among the sub-cells are further reduced; because Sb atoms can promote doping of Zn ions in the metamorphic buffer layer, the introduction amount of Zn ions in the forming process of the metamorphic buffer layer is reduced and the cost is reduced on the premise that the hole providing capability of the metamorphicbuffer layer is not changed.

Description

technical field [0001] The present application relates to the technical field of solar cell fabrication, in particular to a solar cell and a fabrication method. Background technique [0002] Solar cells convert solar energy directly into electricity and are the most efficient form of clean energy. Specifically, III-V compound semiconductor solar cells have the highest conversion efficiency in the current material system, and at the same time have the advantages of good high temperature resistance and strong radiation resistance, and are recognized as a new generation of high-performance, long-life space main power supply, Among them, triple-junction cells with a GaInP / InGaAs / Ge lattice matching structure have been widely used in the aerospace field. [0003] However, the traditional lattice-matched three-junction cell top cell GaInP and middle cell In 0.01 The current density of GaAs is much smaller than that of Ge in the bottom cell, which makes the traditional lattice-ma...

AI Technical Summary

Problems solved by technology

To change the bandgap of each sub-cell in a solar cell needs to change the composition ratio of ternary or even quaternary materials in each sub-cell, which often leads to residual stress and dislocations caused by lattice mismatch between the sub-cells, affecting battery performance

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