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Preparation method of carbon nitride electrode material

An electrode material, carbon nitride technology, applied in chemical instruments and methods, nitrogen compounds, cable/conductor manufacturing, etc., can solve the problems of complex and harsh synthesis conditions, uneven CN film, poor substrate contact, etc., and achieve simple preparation technology. The effect of easy operation, uniform thin film, and excellent photoelectrochemical performance

Active Publication Date: 2020-12-11
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional CN electrode preparation methods have great limitations, such as the prepared CN film is not uniform, the thickness is uncontrollable, and the contact with the substrate is poor. Each method only allows a specific type of monomer as the precursor of the CN material, and these methods Most of them are only applicable to a single base and cannot be extended to other bases
In addition, some methods have complex and harsh synthesis conditions, which seriously affect their practical application.

Method used

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  • Preparation method of carbon nitride electrode material
  • Preparation method of carbon nitride electrode material
  • Preparation method of carbon nitride electrode material

Examples

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Effect test

Embodiment 1

[0032] Add thiourea powder into a glass bottle containing 20ml of deionized water, and heat it to 70°C while stirring. After reaching saturation, then quickly immerse the clean FTO glass piece vertically into the hot saturated solution and take it out immediately. After the surface is dry , a uniform thiourea film layer was formed on the FTO. The thickness of the thiourea film can be adjusted by repeating the above steps for multiple dip-dry cycles. Thiourea films with thickness of 1, 3, 5 and 8 layers were prepared respectively. The thiourea film was dried in an oven at 60°C or air-dried naturally. Put the above dried thiourea film into a glass tube, pass nitrogen gas to drive away the air in the tube, wrap the tube mouth with tin foil, then put the glass tube in a nitrogen furnace for calcination at a high temperature of 500°C for 2 hours, and the heating rate is 5°C / min, after natural cooling, a uniform CN film electrode can be obtained. CN film electrodes with differen...

Embodiment 2

[0037] Add thiourea powder into a glass bottle containing 20ml of deionized water, heat it to 60°C while stirring, and then dip the clean FTO glass piece vertically into the hot saturated solution quickly and take it out immediately. After the surface is dry, A uniform thiourea film layer was formed on the FTO. The thiourea film was dried in an oven at 60°C or air-dried naturally. Put the above dried thiourea film into a glass tube, pass through nitrogen to drive away the air in the tube, wrap the tube mouth with tinfoil, and then put the glass tube in a nitrogen furnace for high temperature calcining at 450°C for 4 hours, with a heating rate of 2°C / min, after natural cooling, a uniform CN film electrode can be obtained. ( Figure 7 )

Embodiment 3

[0039] Add thiourea powder into a glass bottle containing 20ml of deionized water, heat it to 120°C while stirring, then quickly immerse the clean FTO glass piece vertically into the hot saturated solution and take it out immediately. After the surface is dry, put it on the FTO A uniform thiourea film layer was formed. The thiourea film was dried in an oven at 60°C or air-dried naturally. Put the above dried thiourea film into a glass tube, pass through nitrogen to drive away the air in the tube, wrap the tube mouth with tinfoil, then put the glass tube in a nitrogen furnace for calcination at a high temperature of 550°C for 3 hours, and the heating rate is 40°C / min, after natural cooling, a uniform CN thin film electrode can be obtained. ( Figure 7 )

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Abstract

The invention discloses a preparation method of a carbon nitride electrode material. The preparation method comprises the following steps: (1) preparing a precursor film: vertically and rapidly immersing a clean conductive substrate A into a hot saturated CN precursor aqueous solution, then immediately taking out the conductive substrate A, forming a uniform precursor film layer on the conductivesubstrate A after the surface is dried, adjusting the thickness of the precursor film layer by repeating the above steps for multiple times of dipping and drying cycles to form multiple layers, and drying or naturally air-drying the obtained precursor film in a drying oven at 60 DEG C for later use; and (2) preparing the CN electrode: putting the dry precursor film obtained in step (1) into a glass tube, introducing nitrogen to expel air in the tube, binding a tube opening with tin foil paper, then putting the glass tube into a nitrogen furnace, performing high-temperature calcination, and naturally cooling to obtain the uniform CN film electrode. The method provided by the invention is simple and easy to implement, cheap, simple and convenient in used equipment, suitable for industrial development and beneficial to popularization.

Description

technical field [0001] The invention relates to the technical field of electrode material preparation, in particular to a method for preparing a carbon nitride electrode material. Background technique [0002] Carbon nitride (CN) has attracted extensive attention as a photoelectric material in recent years due to its advantages of being metal-free, non-toxic, good stability, suitable energy band structure, and low price, and has great application prospects in the fields of energy and the environment. However, the traditional CN electrode preparation methods have great limitations, such as the prepared CN film is not uniform, the thickness is uncontrollable, and the contact with the substrate is poor. Each method only allows a specific type of monomer as the precursor of the CN material, and these methods Most of them are only applicable to a single base and cannot be extended to other bases. In addition, some methods have complex and harsh synthesis conditions, which seriou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/04H01B13/00
CPCH01B1/04H01B13/00C01B21/0605C03C2218/111C03C2218/326C03C17/225C23C18/04C23C18/1204C23C18/1279
Inventor 秦佳妮潘宝王传义
Owner SHAANXI UNIV OF SCI & TECH
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