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Zirconium oxide film, deposition method and application thereof

A deposition method and technology of zirconia film, applied in electrical components, circuits, semiconductor/solid-state device manufacturing, etc., can solve problems such as increasing the difficulty of capacitance improvement, insufficient step coverage, uneven electric field distribution, etc.

Inactive Publication Date: 2020-12-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, due to the insufficient step coverage of the dielectric film in the capacitor, the electric field distribution is uneven, which aggravates the difficulty of improving the capacitance

Method used

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  • Zirconium oxide film, deposition method and application thereof
  • Zirconium oxide film, deposition method and application thereof
  • Zirconium oxide film, deposition method and application thereof

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Embodiment Construction

[0017] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0018] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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Abstract

The invention relates to a zirconium oxide film, a deposition method and application thereof. The zirconium oxide film ZrO2 deposition method includes: depositing a zirconium oxide film by a chemicalvapor deposition method, and supplying a cyclopentyl methyl ether solvent before supplying a zirconium source during deposition. According to the invention, a cyclopentyl methyl ether solvent is usedas an additive to promote the flow of a zirconium source, so that the problem of non-uniform film caused by local excessive deposition can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a zirconium oxide film and its deposition method and application. Background technique [0002] With the miniaturization of semiconductor devices, one of its main structures - the design of capacitors is becoming more difficult, especially the difficulty of improving capacitance. At the same time, due to the insufficient step coverage of the dielectric film in the capacitor, the electric field distribution is uneven, which aggravates the difficulty of improving the capacitance. Contents of the invention [0003] The purpose of the present invention is to provide a deposition method of zirconium oxide film, which uses cyclopentyl methyl ether solvent as an additive to promote the flow of zirconium source, which can avoid the problem of film unevenness caused by local excessive deposition, and can improve the production efficiency of zirconium oxide film. Membrane step c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02554H01L21/0262H01L21/02658
Inventor 李相遇安重镒金成基项金娟李亭亭卢一泓
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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