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Melting device convenient for semiconductor graphite wafer processing and use method thereof

A melting device, semiconductor technology, applied in chemical instruments and methods, mixing methods, mixers with rotary stirring devices, etc. The problem is to solve the poor mixing effect, improve the quality after crushing, and improve the quality of crushing.

Inactive Publication Date: 2020-11-24
DATONG XINCHENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Wafer refers to the silicon chip used in the production of silicon semiconductor integrated circuits. Because of its circular shape, it is called a wafer; a wafer is a carrier used in the production of integrated circuits. Generally speaking, a wafer refers to a single crystal silicon wafer; Crystal silicon wafers are drawn and refined from ordinary silica sand, and are made into single crystal silicon rods through a series of measures of dissolution, purification and distillation. After the single crystal silicon rods are polished and sliced, they become wafers; The surface of the graphite wafer is coated with a graphene oxide ethanol solution containing boron or nitrogen to make a semiconductor graphite wafer; when recycling the graphite wafer, it needs to be pulverized and melted. The existing graphite wafer pulverization device There are disadvantages of poor crushing efficiency, poor crushing quality and uniformity, and the disadvantages of long time-consuming and poor mixing effect of black wafer particles in dissolution due to insufficient crushing

Method used

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  • Melting device convenient for semiconductor graphite wafer processing and use method thereof
  • Melting device convenient for semiconductor graphite wafer processing and use method thereof
  • Melting device convenient for semiconductor graphite wafer processing and use method thereof

Examples

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Embodiment 1

[0030] Embodiment 1: see Figure 1-5 , is convenient to the melting device of semiconductor graphite wafer processing, comprises base 1, and described base 1 is the rectangular plate shape that horizontally arranges, and is fixedly provided with rectangular dissolution box 2 in the middle of the top surface of described base 1, and in described dissolution box A rectangular equipment box 3 is fixed on the top of one side of the 2, and a drive assembly is fixed in the equipment box 3; a liquid inlet pipe 4 is fixed horizontally in the middle of one side of the dissolution box 2; The bottom of the other side of the box 2 is horizontally fixed with a liquid outlet pipe 5, and a rectangular motor box 6 is fixed on the other side of the dissolution box 2 above the liquid outlet pipe 5. In the motor box 6 The first motor 7 is fixed horizontally, and the model of the second motor 7 is YCTL180-4A. Both sides of the middle part of the top surface of the dissolution tank 2 are verticall...

Embodiment 2

[0034] Example 2: see Image 6 , in the present embodiment, the present invention also proposes the use method of the melting device that is convenient to semiconductor graphite wafer processing, comprises the following steps:

[0035] Step 1: Firstly, the first motor 7 and the second motor 16 are electrically connected to the storage battery 17 respectively through wires, and the decomposition liquid is injected into the dissolution tank 2 through the liquid inlet pipe 4, and then the bulk graphite wafer to be melted is passed through the Feed hopper 8 is placed in the dissolution box 2;

[0036] Step 2: Drive the crushing shaft 10 at the front end to rotate by controlling the second motor 16, drive the driving gear 18 to rotate through the rotation of the crushing shaft 10 at the front end, and drive the crushing at the rear end of the crushing chamber through the meshing transmission between the driving gear 18 and the driven gear 19 The shaft 10 rotates, and the crushing ...

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Abstract

The invention discloses a melting device convenient for semiconductor graphite wafer processing. The melting device comprises a base, wherein a melting box is fixedly arranged on the top surface of the base, and an equipment box is arranged at the top of one side of the melting box; and a partition plate is fixedly arranged on the upper portion in the melting box, and the melting box is divided into a smashing cavity and a melting cavity through the partition plate. Two crushing shafts are transversely arranged in the crushing cavity in parallel; a shaft body of each crushing shaft is sleevedwith a plurality of first sleeves, and a crushing assembly is fixedly arranged on the peripheral side of the surface of each first sleeve; a stirring shaft is transversely arranged in the melting cavity, a shaft body of the stirring shaft is fixedly sleeved with second casing pipes at equal intervals, and a disturbance assembly and a stirring assembly are fixedly arranged on the upper portion andthe lower portion of a pipe body of each second casing pipe respectively; the device is easy to operate, and the problems that the crushing efficiency is poor and the crushing quality and uniformity are poor are solved through the driving assembly and the crushing assembly; and through the turbulent flow assembly and the stirring assembly, the problems of longer time consumption and poorer mixingeffect during dissolution are solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor graphite wafer processing, in particular to a melting device and an application method for facilitating semiconductor graphite wafer processing. Background technique [0002] Wafer refers to the silicon chip used in the production of silicon semiconductor integrated circuits. Because of its circular shape, it is called a wafer; a wafer is a carrier used in the production of integrated circuits. Generally speaking, a wafer refers to a single crystal silicon wafer; Crystal silicon wafers are drawn and refined from ordinary silica sand, and are made into single crystal silicon rods through a series of measures of dissolution, purification and distillation. After the single crystal silicon rods are polished and sliced, they become wafers; The surface of the graphite wafer is coated with a graphene oxide ethanol solution containing boron or nitrogen to make a semiconductor graphite wafer; when re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01F1/00B01F3/20B01F7/04B01F13/10B02C4/08B02C4/30B02C4/42B02C21/02B02C23/10B01F23/70
CPCB02C4/08B02C4/30B02C4/42B02C21/02B02C23/10B01F21/10B01F23/708B01F27/70B01F33/831
Inventor 柴万红张培林武建军柴利春张作文王志辉
Owner DATONG XINCHENG NEW MATERIAL CO LTD
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