Graphite crucible convenient for semiconductor crystal growth, and use method thereof

A technology for graphite crucible and crystal growth, applied in the field of graphite crucible, can solve the problems of high workload and labor intensity of staff, inconvenient clamping and fixing of iridium rod, easy shaking of iridium rod when lifting and rotating, etc., so as to improve the pulling efficiency. , Improve clamping firmness, reduce workload and labor intensity

Active Publication Date: 2020-11-20
DATONG XINCHENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the preparation method of crystal growth, the pulling method is usually used. The growth process of the pulling method first heats and melts the raw material of the crystal to be grown in a high-temperature-resistant crucible, and adjusts the temperature field in the furnace so that the upper part of the melt is at Supercooled state; then place a seed crystal on the seed crystal chuck, let the seed crystal touch the surface of the melt, after the surface of the seed crystal is slightly melted, pull and turn the iridium rod, so that the melt is in a supercooled state and crystallized in On the seed crystal, cylindrical crystals are grown in the process of continuous pulling and rotating; but this method requires the staff to rotate and pull the iridium rod, which results in a large workload and labor intensity for the staff; the existing The rotating device has the disadvantage that it is not convenient to clamp and fix iridium rods of different thicknesses; at the same time, the iridium rod is prone to shaking when it is lifted and rotated

Method used

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  • Graphite crucible convenient for semiconductor crystal growth, and use method thereof
  • Graphite crucible convenient for semiconductor crystal growth, and use method thereof
  • Graphite crucible convenient for semiconductor crystal growth, and use method thereof

Examples

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Effect test

Embodiment 1

[0031] Example 1: see Figure 1-5 , a graphite crucible for semiconductor crystal growth, comprising a base 1, the base 1 is a horizontally arranged rectangular plate shape, four corners of the bottom surface of the base 1 are vertically fixed with supporting legs 2; The middle part of one side of the top surface is vertically fixed with a rectangular column 3, and the middle part of the top surface of the base 1 is horizontally fixed with a rectangular plate-shaped placement seat 4, and the placement seat 4 is vertically provided with an opening facing upwards. The furnace body 5 is covered with a furnace cover 6 at the top opening of the furnace body 5, and a circular through hole is provided in the middle of the top surface of the furnace cover 6, and a vertically fixed hole is installed in the circular through hole. There is a guide tube 7, and a graphite heat field 8 with an opening facing upwards is vertically provided in the body of furnace 5, and support plates 9 are v...

Embodiment 2

[0036] Example 2: see Figure 6 , in the present embodiment, the present invention also proposes a method for using a graphite crucible for semiconductor crystal growth, comprising the following steps:

[0037] Step 1, first electrically connect the electric push cylinder 14, the first motor 16 and the second motor 21 to an external power supply through wires, and a seed crystal is fixed at the bottom of the iridium rod 20;

[0038] Step 2, drive the moving block 31 at the inner end of the round bar 32 by moving the splint 35 outwards to squeeze the return spring 33, then place the furnace body 5 on the placement seat 4 between the two splints 35, and pass the return spring 33 The elastic force of the rod 32 drives the round rod 32 to shrink inwardly, and the splint 35 on the top of the rectangular bar 34 is driven by the shrinkage of the round rod 32 to limit and clamp the furnace body 5; then, the raw material in the quartz crucible 11 is melted into a liquid state;

[0039...

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Abstract

The invention discloses a graphite crucible facilitating semiconductor crystal growth. The graphite crucible comprises a base, wherein a rectangular column is arranged in the middle of one side of thetop surface of the base, a placing seat is arranged in the middle of the top surface of the base, a furnace body is arranged on the placing seat, a graphite thermal field is arranged in the furnace body, supporting plates are arranged on the two sides of the bottom of the graphite thermal field, a graphite crucible is placed in the graphite thermal field, a quartz crucible is arranged on the inner wall of the graphite crucible, a rotating assembly is arranged at the bottom of a motor box, a lifting cavity is formed in the upper portion in the rectangular column, a lifting assembly is arrangedin the lifting cavity, reset cavities are formed in the front ends and the rear ends of the two sides of the interior of the placing seat correspondingly, and reset assemblies are arranged in the reset cavities. According to the invention, the graphite crucible is convenient to operate; through the adjusting assembly and the clamping assembly, the problem that an existing device is inconvenient to clamp and fix iridium rods of different thicknesses and sizes is solved; through the lifting assembly and the rotating assembly, the problems of high workload and high labor intensity during operation are solved; and the problem that an iridium rod is prone to shaking in the lifting process is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal growth, in particular to a graphite crucible for facilitating semiconductor crystal growth and a use method thereof. Background technique [0002] In the preparation method of crystal growth, the pulling method is usually used. The growth process of the pulling method first heats and melts the raw material of the crystal to be grown in a high-temperature-resistant crucible, and adjusts the temperature field in the furnace so that the upper part of the melt is at Supercooled state; then place a seed crystal on the seed crystal chuck, let the seed crystal touch the surface of the melt, after the surface of the seed crystal is slightly melted, pull and turn the iridium rod, so that the melt is in a supercooled state and crystallized in On the seed crystal, cylindrical crystals are grown in the process of continuous pulling and rotating; but this method requires the staff to rotate and p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/10C30B15/30C30B15/32
CPCC30B15/10C30B15/30C30B15/32
Inventor 武晨洁张培林武建军柴利春张作文王志辉
Owner DATONG XINCHENG NEW MATERIAL CO LTD
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