Three-dimensional memory and manufacturing method thereof

Abstract

The invention relates to a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory comprises a substrate; a core storage area and a step area which are formed on thesubstrate, wherein the core storage area comprises a stacking structure formed on the substrate, and the step area comprises a step structure formed by the stacking structure; a grid line which penetrates through the core storage area and the step area; grooves which are located between every two adjacent grid lines, wherein the length of each groove is less than that of each grid line. The three-dimensional memory provided by the invention comprises the support structure formed by the plurality of grooves, so the problems of insufficient support, even collapse and the like caused by the defects of the deep hole structure can be avoided. The manufacturing method of the three-dimensional memory is simple in process, the etching difficulty of a higher depth-to-width ratio in the three-dimensional memory is greatly reduced, and a process window of a subsequent process is enlarged.

Description

technical field [0001] The invention relates to the manufacturing field of integrated circuits, in particular to a three-dimensional memory with a groove support structure and a manufacturing method thereof. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, memory devices with a three-dimensional (3D) structure have been developed and mass-produced in the industry, which improves integration density by three-dimensionally arranging memory cells on a substrate. As the number of 3D NAND layers continues to increase, in order to prevent the deformation or collapse of the laminated structure, some dummy channel holes will be formed in some regions of the semiconductor device as supporting structures without affecting the device performance. However, with the continuous progress of semiconductor technology, after the three-dimensional memory device passes through various process environments, such as high temperature, high press...

AI Technical Summary

Problems solved by technology

However, with the continuous advancement of semiconductor technology, after the three-dimensional memory device passes through various process environments, such as high temperature, high pressure and other environments, the formed support structure is deformed or even collapsed, so that it cannot play an effective supporting role.

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