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Preparation method of boron-doped graphene composite material and application of the boron-doped graphene composite material as negative dielectric material

A composite material and boron doping technology, which is applied in the field of preparation of boron-doped graphene negative dielectric composite materials, can solve the problems of unfavorable impedance matching, limited application of metal negative dielectric composite materials, large negative value of metal, etc. The preparation method is simple, the operation is simple, and the process is stable.

Active Publication Date: 2020-11-17
SHANDONG UNIV
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AI Technical Summary

Problems solved by technology

[0004] Composite materials with metal as the conductive functional phase can obtain negative dielectric properties, but the negative value of the dielectric constant of metal is relatively large, which is not conducive to the realization of impedance matching. In a sense, this limits the use of metal negative dielectric composite materials. application
Composite materials with carbon materials as the conductive functional phase mainly study the effect of the content of the conductive phase on the dielectric constant, and obtain a negative dielectric at a higher content of the conductive phase, but there are few reports on the regulation of the negative dielectric constant of the composite material at the atomic scale

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  • Preparation method of boron-doped graphene composite material and application of the boron-doped graphene composite material as negative dielectric material

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preparation example Construction

[0023] In the first aspect of the present invention, a method for preparing a boron-doped graphene composite material is provided, the preparation method comprising the following steps: adding boric acid to the graphene oxide dispersion liquid to disperse to obtain a uniform dispersion liquid, and the dispersion liquid is hydrothermally react to obtain boron-doped graphene powder; add phenolic resin to the boron-doped graphene powder and grind to obtain composite powder; the composite powder is formed by mechanical pressing to form the boron-doped graphene composite material.

[0024] Preferably, the concentration of the graphene oxide dispersion is 4-6 mg / ml.

[0025] Preferably, the boric acid is added to the graphene oxide dispersion and dissolved by ultrasonication, and the ultrasonication time is 4-6 hours. Further preferably, the ultrasonic time is 5 hours.

[0026] Preferably, the temperature of the hydrothermal reaction is 140-180° C., and the reaction time is 2-4 hou...

Embodiment 1

[0049] In the present embodiment, a kind of preparation method of boron-doped graphene composite material is provided, and described preparation method comprises the following steps:

[0050] S1. Prepare graphene oxide dispersion: disperse graphene oxide (GO) in deionized water to obtain a GO dispersion with a solution concentration of 5 mg / ml;

[0051] S2. Add boric acid (H 3 BO 3 ): put a certain mass of H 3 BO 3 Place in the GO dispersion prepared in step S1 and sonicate for dissolution; the sonication time is 5h;

[0052] S3. hydrothermal treatment: the H prepared in step S2 3 BO 3 The mixed solution with the GO dispersion liquid was transferred to the inner tank of the reactor, and heated at 160°C for 3 hours;

[0053] S4. Centrifugal washing: The boron-doped graphene hydrogel obtained by the hydrothermal reaction in step S3 is subjected to centrifugal washing treatment to obtain a boron-doped graphene suspension; the centrifugal speed is 3000rpm, and the centrifuga...

Embodiment 2

[0058] In the present embodiment, a kind of preparation method of boron-doped graphene composite material is provided, and described preparation method comprises the following steps:

[0059] S1. Prepare graphene oxide dispersion: disperse graphene oxide (GO) in deionized water to obtain a GO dispersion with a solution concentration of 4 mg / ml;

[0060] S2. Add boric acid (H 3 BO 3 ): put a certain mass of H 3 BO 3 Place in the GO dispersion prepared in step S1 and sonicate for dissolution; the sonication time is 4h;

[0061] S3. hydrothermal treatment: the H prepared in step S2 3 BO 3 The mixed solution with the GO dispersion liquid was transferred to the inner tank of the reactor, and heated at 140°C for 4 hours;

[0062] S4. Centrifugal washing: The boron-doped graphene hydrogel obtained by the hydrothermal reaction in step S3 is subjected to centrifugal washing treatment to obtain a boron-doped graphene suspension; the centrifugal speed is 2000rpm, and the centrifuga...

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Abstract

The invention particularly relates to a preparation method of a boron-doped graphene composite material and application of the boron-doped graphene composite material as a negative dielectric material. At present, related researches on regulation and control of negative dielectric constants of composite materials at the atomic scale by taking a carbon material as a conductive functional phase arefew. The invention provides the boron-doped graphene composite material, and the preparation method of the composite material comprises: preparing boron-doped graphene powder from a dispersion liquidof boric acid and graphene oxide through a hydrothermal reaction, mixing the boron-doped graphene powder with phenolic resin powder, grinding, and mechanically pressing to obtain the boron-doped graphene material. The uniformly distributed boron-doped graphene conductive network is constructed in the phenolic resin, and the negative dielectric property can be regulated and controlled by regulatingand controlling the boron doping amount. The preparation method of the composite material is simple, raw materials are economical and easy to obtain, and good industrial production significance is achieved.

Description

technical field [0001] The invention belongs to the technical field of negative dielectric composite materials, and in particular relates to a preparation method of a boron-doped graphene negative dielectric composite material, a negative dielectric composite material obtained by the preparation method and an application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Generally, metal materials and carbon materials can be used as conductive functional phases to prepare negative dielectric composite materials. The phase tends to form an interconnected three-dimensional conductive network in the system, resulting in plasma oscillation or polarized dielectric resona...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L61/06C08K9/02C08K3/04C01B32/198C08J5/18
CPCC08J5/18C08J2361/06C08K9/02C08K2201/001C08K3/042C01B32/198C08L61/06
Inventor 钱磊尹锐
Owner SHANDONG UNIV
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