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Method for preparing rubrene spherocrystal film through induction of rigid structure polymer

A technology of rubrene spherulites and rigid polymers, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of high cost and complicated operation, and achieves dense and dense coverage, simple and easy operation. effect of industrialization

Inactive Publication Date: 2020-11-10
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to overcome the deficiencies of the prior art, the object of the present invention is to provide a method for preparing rubrene spherulite film induced by rigid structure polymer, which can effectively solve the problems of complex operation and high cost while improving the crystallization quality of rubrene film

Method used

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  • Method for preparing rubrene spherocrystal film through induction of rigid structure polymer
  • Method for preparing rubrene spherocrystal film through induction of rigid structure polymer
  • Method for preparing rubrene spherocrystal film through induction of rigid structure polymer

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Embodiment 1

[0034] A method for preparing rubrene spherulite film induced by rigid structure polymer, comprising the following preparation steps:

[0035] 1) First, clean and dry the 1cm*1cm FTO conductive glass sheet, then prepare 1mL PET solution with trifluoroacetic acid as solvent, the solution mass concentration is 2.7mg / mL, and spin coat the PET solution onto the FTO conductive glass with a homogenizer to form film;

[0036] 2) Under darkroom conditions, use chloroform as a solvent to configure a rubrene solution with a solution mass concentration of 9.5 mg / mL, and spin coat the rubrene solution onto the PET film obtained in step 1) with a homogenizer;

[0037] 3) Under darkroom conditions, wrap the FTO conductive glass with rubrene film obtained in step 2) with tin foil to avoid light, place it on a hot stage at 160°C, and anneal for 50s;

[0038] 4) Under darkroom conditions, wrap the FTO conductive glass with rubrene film obtained in step 3) with tin foil to avoid light, place i...

Embodiment 2

[0041]A method for preparing rubrene spherulite film induced by rigid structure polymer, comprising the following preparation steps:

[0042] 1) First, clean and dry the 1cm*1cm FTO conductive glass sheet, then prepare 1mL PET solution with trifluoroacetic acid as the solvent, the solution mass concentration is 3mg / mL, spin-coat the PET solution onto the FTO conductive glass with a homogenizer to form a thin film ;

[0043] 2) Under darkroom conditions, use chloroform as a solvent to configure a rubrene solution with a solution mass concentration of 10 mg / mL, and spin coat the rubrene solution onto the PET film obtained in step 1) with a homogenizer;

[0044] 3) Under darkroom conditions, wrap the FTO conductive glass with rubrene film obtained in step 2) with tin foil to avoid light, place it on a hot stage at 170°C, and anneal for 60s;

[0045] 4) Under darkroom conditions, wrap the FTO conductive glass with rubrene film obtained in step 3) with tin foil to avoid light, pla...

Embodiment 3

[0048] A method for preparing rubrene spherulite film induced by rigid structure polymer, comprising the following preparation steps:

[0049] 1) First clean and dry the 1cm*1cm FTO conductive glass sheet, then prepare 1mL PET solution with trifluoroacetic acid as solvent, the solution mass concentration is 3.5mg / mL, and spin coat the PET solution onto the FTO conductive glass with a homogenizer to form film;

[0050] 2) Under darkroom conditions, use chloroform as a solvent to configure a rubrene solution with a solution mass concentration of 10.5 mg / mL, and spin coat the rubrene solution onto the PET film obtained in step 1) with a homogenizer;

[0051] 3) Under darkroom conditions, wrap the FTO conductive glass with rubrene spin-coated film obtained in step 2) with tin foil to avoid light, place it on a hot stage at 180°C, and anneal for 70s;

[0052] 4) Under darkroom conditions, wrap the FTO conductive glass with rubrene spin-coated film obtained in step 3) with tin foil...

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Abstract

The invention relates to a method for preparing a rubrene spherocrystal film by induction of a rigid polymer, and the method comprises the following steps: spin-coating a rigid polymer solution on a substrate to form a film, spin-coating a rubrene solution on the polymer film to form a rubrene film, and under the condition of heat treatment annealing, enabling rubrene molecules to orderly grow into spherocrystals on the induction layer with the rigid polymer as the heterogeneous agent, wherein the spherocrystal film is high in coverage rate and compact. According to the invention, a good solvent and a rigid polymer are selected to be mixed into a solution, and the solution is coated on the substrate by means of a solution spin-coating method to form a layer of substrate modification layerfilm, so the secondary dissolution of the polymer due to the action of the solvent when the rubrene film is prepared by a cosolvent method is avoided, and the regularity and morphology of the crystalfilm are ensured. Compared with a conventional vacuum deposition method, the solution spin-coating method for preparing the rubrene spherocrystal thin film is easy to operate, large equipment supportis not needed, the industrialization is easier to achieve, and a foundation is laid for preparing a high-performance organic field effect transistor.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor materials, and in particular relates to a method for preparing rubrene spherulite films induced by rigid structural polymers. Background technique [0002] With the development of information technology, people have higher and higher requirements for the performance of electronic materials. Due to the shortcomings of traditional inorganic semiconductor materials such as high price, complex preparation process, difficulty in mass production, and inability to deposit on flexible substrates, the development of information technology was once restricted. Organic semiconductor materials have the advantages of low cost, easy processing, high integration, and easier industrialization, and are expected to break through this bottleneck. Organic semiconductor materials have broad application prospects in the fields of flexible display and organic storage, and have received a lot of attention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/30H01L51/46H01L51/54
CPCH10K71/12H10K85/622
Inventor 高旭静刘文涛朱成瑶冯琳琳王家豪高婷婷王晨李鹏洲刘浩黄淼铭何素芹朱诚身
Owner ZHENGZHOU UNIV
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