Silicon-based millimeter wave receiving front-end circuit

Abstract

The invention discloses a silicon-based millimeter wave receiving front-end circuit, which is applied to the field of radio frequency integrated circuits and is used for solving the problems of high power consumption, high cost and poor performance in the prior art. The silicon-based millimeter wave receiving front-end circuit comprises a cascode low-noise amplifier, a transconductance input stage, a quadrature coupling stage, a switch frequency mixing stage and an output load stage. The orthogonal coupling stage is designed at the mixer part, so that two paths of output signals at the receiving front end are equal in size, the phase difference is 90 degrees, the linearity is improved, and two paths of output are realized by using the same mixer, thereby reducing the power consumption.

Description

technical field [0001] The invention belongs to the field of radio frequency integrated circuits, in particular to a receiving front-end circuit. Background technique [0002] The mmWave frequency band will be used for future high-speed wireless services and communication applications. In recent years, potential wireless applications in the Ka-band (26.5-40GHz) include wireless point-to-multipoint services, satellite communications, radiolocation and imaging systems, etc. These systems require low cost, small size, higher levels of system integration and high performance RF, mmWave components such as low noise amplifier and mixer unit modules. [0003] The receiving front-end is very important in the entire receiving system. It mainly includes low-noise amplifiers and mixers, which can filter the signals we need from the received signals to facilitate subsequent processing and application of the receiver. The millimeter-wave receiving front-end will continue to develop in ...

AI Technical Summary

Problems solved by technology

[0004] Millimeter wave phased array receiver system applied to intermediate frequency phase shifting structure, such as figure 1 As shown in (b), an existing mmWave wideband receiver front-end (Chun-Hsing Li, Chien-Nan Kuo, and Ming-Ching Kuo, “A 1.2-V 5.2-mW20–30-GHz Wideband Receiver Front-End in 0.18-μm CMOS,” IEEETrans.Microw.Theory Tech., vol.60, no.11, pp.3502–3512, 2012.), using baluns to achieve wideband signal output, and also realized low-noise amplifier to mix The single-ended to differential output of the frequency converter, but it needs two mixers of I and Q channels, and a phase shifter is required to perform quadrature phase shift on the local oscillator signal, which increases the hardware overhead of the oscillator circuit and brings local On the other hand, if a quadrature local oscillator is used, the resonant cavities of the two oscillators need to resonate at a certain frequency offset from the center frequency. Considering the factor of the process angle, this solution is very difficult. It is difficult to ensure good orthogonality and phase noise characteristics, and compared with conventional single resonator oscillators, the power consumption is also doubled

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