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U-W-N ternary thin film as well as preparation method and application thereof

A U-W-N, thin-film technology, applied in nuclear reactors, fusion reactors, thermonuclear fusion reactors, etc., can solve problems such as limited ability to suppress stimulated Brillouin scattering, complex structural layers of uranium black cavity, and easy excitation of epithermal electrons, etc., to achieve Effects of suppressing M-band hard X-rays and epithermal electron yield, protecting uranium black cavity conversion layer, good interfacial bonding force and chemical compatibility

Active Publication Date: 2020-10-27
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the invention is to solve the complex structure of the existing uranium black cavity, the UN x The control range of N content in the descattering / protective layer is limited, the ability to suppress stimulated Brillouin scattering is limited, and the M of the Au protective layer is easy to be excited by hard X-rays and epithermal electrons. A U-W-N ternary film and its Preparation method and application

Method used

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specific Embodiment approach 1

[0008] Specific Embodiment 1: This embodiment is a U-W-N ternary film, which is characterized in that the mass fraction of N in the U-W-N ternary film is x%, and 0<x≤66.7, and the mass fraction of W is y%, and 0< y≤10%, the remainder is U, and the thickness of the U-W-N ternary thin film is 100nm-700nm.

specific Embodiment approach 2

[0009] Specific Embodiment Two: This embodiment is a method for preparing a U-W-N ternary thin film, which is specifically completed in the following steps: using a DC reactive magnetron sputtering co-deposition method, using Ar as a protective gas, and using N 2 As the reaction gas, the U-W-N ternary film is obtained by magnetron sputtering deposition with the U target and the W target through a DC power supply, the purity of the U target is >99%, the purity of the W target is >99.99%, and the Ar Purity>99.9999%, the N 2 The purity of >99.9999%.

specific Embodiment approach 3

[0010] Specific embodiment three: the difference between this embodiment and specific embodiment two is: the specific process of the described DC reactive magnetron sputtering co-deposition method is as follows:

[0011] 1. Install 1 to 9 mandrels on the rotating support table, adjust the distance between the U target and the center of the mandrel to 10cm to 20cm, and the normal line of the U target center and the plane where the mandrel is located form an angle of 45°; adjust the W target and the plane where the mandrel is located. The center distance of the mandrel is 10cm-20cm, and the center normal of the W target surface and the plane where the mandrel is located form an angle of 45°; the normals of the U target and W target and the plane where the mandrel is located are symmetrically distributed;

[0012] 2. Vacuumize the deposition chamber by mechanical pump and molecular pump to make the vacuum degree of the deposition chamber reach 1×10 -8 Pa~1×10 -6 Pa, then fill in...

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Abstract

The invention discloses a U-W-N ternary thin film and a preparation method and application thereof, belongs to the technical field of laser fusion engineering, and particularly relates to a U-W-N ternary thin film with black cavity dispersion reduction and protection effects and a preparation method and application of the U-W-N ternary thin film. The preparation method and application of the U-W-Nternary thin film aim to solve the problems that a structure layer of an existing uranium black cavity is complex, the regulation and control range of the N content in a UN<x> dispersion reduction / protection layer is limited, the stimulated Brillouin scattering inhibition capacity is limited, and M-band hard X rays of an Au protection layer and superheated electrons are prone to exciting. The mass fraction of N in the U-W-N ternary thin film is x%, x is larger than 0 and smaller than or equal to 66.7%, the mass fraction of W is y%, y is larger than 0 and smaller than or equal to 10%, and thebalance U. The preparation method comprises the steps that a direct-current reactive magnetron sputtering co-deposition method is adopted, N2 serves as reaction gas, magnetron sputtering deposition isconducted on a U target and a W target through a direct-current power source, and the U-W-N ternary thin film is obtained. And the U-W-N ternary thin film is applied to the black cavity as a dispersion reduction / protection layer.

Description

technical field [0001] The invention belongs to the technical field of laser fusion engineering, and in particular relates to a U-W-N ternary thin film with black cavity descattering and protective functions, a preparation method and application thereof. Background technique [0002] In order to realize the globally challenging scientific project of indirect laser-driven controlled thermonuclear fusion reaction (ICF), people have been looking for black cavity materials with better comprehensive performance in conversion efficiency and radiation field characteristics. Theoretical analysis and experimental research show that, compared with the traditional Au black cavity, using metal U with higher radiation and opacity as the black cavity wall material can reduce the energy loss by about 17%, and can effectively suppress the M band hard X Rays and epithermal electron yield (O. Jones, J. Schein, M. Rosen, et al. Phys. Plasmas, 2007, 14, 056311). However, due to the active chem...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35G21B1/11
CPCC23C14/0641C23C14/0688C23C14/352C23C14/0036G21B1/11Y02E30/10
Inventor 何智兵易泰民宛悦杜凯郑凤成李宁邢丕峰杨蒙生柯博何小珊王丽熊郭亮
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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