A kind of metallographic etching solution of copper-gallium alloy and metallographic display method

A copper-gallium alloy and display method technology, which is applied in the field of copper-gallium alloy metallographic corrosion solution, can solve the problems of high cost and difficulty in controlling the corrosion degree, and achieve good material uniformity, shortened corrosion time, and good corrosion resistance Effect

Active Publication Date: 2022-08-09
NINGBO INST OF TECH BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, the prior art does not relate to the corrosion method of this alloy. The copper and copper alloys in the prior art have good corrosion resistance in various atmospheres. When exposed to the air, the surface will contact with the oxygen in the air. reaction, a layer of dense oxide film is quickly formed to protect the substrate, so it takes a long time to corrode with corrosive liquid, generally more than 5 minutes. In order to improve the efficiency of metallographic preparation, electrolytic method is used for corrosion. The Chinese invention patent with the publication number CN109211648A "A Method for Preparation of Aluminum Oxide Dispersion Strengthened Copper Alloy Metallographic Samples", the electrolysis time is 60-120s, but the electrolysis process will be affected by factors such as current, voltage, temperature and time , not only the cost is high and the degree of corrosion is difficult to grasp, but the present invention provides a metallographic corrosion solution for copper-gallium alloys with low cost, shortened corrosion time, easy control of corrosion degree, and ability to clearly display grain boundaries and structures, and provides a Corresponding Simple and Effective Copper-Gallium Alloy Metallographic Display Method

Method used

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  • A kind of metallographic etching solution of copper-gallium alloy and metallographic display method
  • A kind of metallographic etching solution of copper-gallium alloy and metallographic display method
  • A kind of metallographic etching solution of copper-gallium alloy and metallographic display method

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Effect test

Embodiment 1

[0051] The mass fraction ratio of the copper-gallium alloy in this embodiment is Ga:Cu(Wt%)=20:80

[0052] (a) Cut the copper gallium alloy into a square sample with a size of 12mm*12mm*25mm; this size is easier to hold and thus easier to operate;

[0053] (b) first-stage grinding: select 300 mesh sandpaper to be installed on the grinding machine, use water as a wetting agent for grinding, select a 12mm*12mm surface as a grinding surface, the grinding machine rotational speed is 150r / min, and the grinding time is 15 minutes; The cutting marks on the polished surface can be polished off;

[0054] (c) Second-stage grinding: wash the sample with clean water, replace the sandpaper on the grinding machine with 600 mesh, and the grinding direction of the sample is 90° from the scratches of the first-stage grinding Angle, the grinding machine speed is 150r / min, continue grinding the grinding surface, grinding time is 15 minutes;

[0055] (d) third stage grinding: the difference bet...

Embodiment 2

[0062] The mass fraction ratio of the copper-gallium alloy in this embodiment is Ga:Cu(Wt%)=45:55

[0063] (a) Cut the copper gallium alloy into a square sample with a size of 5mm*5mm*15mm; this size is easier to hold and thus easier to operate;

[0064] (b) grinding in the first stage: select 60 mesh sandpaper to be installed on the grinding machine, use water as a wetting agent to grind, select a 5mm*5mm surface as the grinding surface, the grinding machine rotating speed is 100r / min, and the grinding time is 5 minutes; The cutting marks on the polished surface can be polished off;

[0065] (c) Second-stage grinding: wash the sample with clean water, replace the sandpaper on the grinding machine with 500 mesh, and the grinding direction of the sample is 60° from the scratches of the first-stage grinding Angle, the grinding machine speed is 100r / min, continue grinding the grinding surface, grinding time is 5 minutes;

[0066] (d) third stage grinding: the difference between...

Embodiment 3

[0073] The mass fraction ratio of the copper-gallium alloy in this embodiment is Ga:Cu(Wt%)=10:90

[0074] (a) Cut the copper-gallium alloy into a square sample with a size of 20mm*20mm*45mm; this size is easier to hold and thus easier to operate;

[0075] (b) first stage grinding: select 400 mesh sandpaper to be installed on the grinding machine, use water as a wetting agent to grind, select a 20mm*20mm surface as a grinding surface, the grinding machine rotating speed is 200r / min, and the grinding time is 20 minutes; The cutting marks on the polished surface can be polished off;

[0076] (c) Second-stage grinding: wash the sample with clean water, replace the sandpaper on the grinding machine with 900 mesh, and the grinding direction of the sample is 120° from the scratches of the first-stage grinding Angle, the grinding machine speed is 200r / min, continue grinding the grinding surface, grinding time is 20 minutes;

[0077] (d) third stage grinding: the difference between ...

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Abstract

The invention relates to a metallographic etching solution of copper-gallium alloy and a metallographic display method. The mass fraction of the metallographic etching solution is: 10-30% of nitric acid, 8-12% of sulfuric acid, 4-14% of ammonium chloride, and 4-14% of chlorinated ammonium chloride. Chromium is 7-17%, and the balance is water; the metallographic display method includes the following steps: cutting the sample, first-stage grinding, second-stage grinding, third-stage grinding, polishing, cleaning and drying, corrosion, and rinsing. The metallographic etching solution and the metallographic display method can shorten the corrosion time, facilitate the control of the corrosion degree, and can clearly display the grain boundary and the structure.

Description

technical field [0001] The invention relates to the field of metallographic preparation, in particular to a metallographic etching solution of copper-gallium alloy and a metallographic display method. Background technique [0002] Academia and industry generally believe that the development of solar cells has entered the third generation. The first generation is monocrystalline silicon solar cells, and the second generation is polycrystalline silicon, amorphous silicon and other solar cells. Copper indium gallium selenide thin film solar cells have the remarkable characteristics of low production cost, low pollution, no decay, and good low light performance. The efficiency ranks first among various thin-film solar cells, close to crystalline silicon solar cells, and the cost is only one-third of its cost. In addition, the battery has a soft, uniform black appearance, ideal for applications where appearance is critical. [0003] As an important raw material for manufacturin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18G01N1/32
CPCC23F1/18G01N1/32Y02P70/50
Inventor 张虎杨本润高明
Owner NINGBO INST OF TECH BEIHANG UNIV
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