Circuit based on magnetic tunnel junction, and device based on magnetic tunnel junction

Abstract

The invention provides a circuit based on a magnetic tunnel junction, and a device based on the magnetic tunnel junction. The circuit based on the magnetic tunnel junction comprises a storage array module, a multipath bit line selector, a self-adaptive compensation module and a sensitive amplification module. The circuit based on the magnetic tunnel junction can carry out self-adaptive compensation on a voltage signal required by the input end of the sensitive amplification module according to a reference voltage; the speed of outputting a stable voltage difference or a comparison result by the sensitive amplification module is accelerated; the pre-charging time and the data reading period are shortened; the circuit is enabled to correctly read corresponding data in the storage array module, the data reading speed of the device is improved, the storage array module can be further enabled to be used for logic operation of the data, and correct operation of the logic operation can be ensured, so that a storage and calculation integrated function is realized, and the logic operation speed and the data throughput of the device can also be improved.

Description

technical field [0001] The invention relates to the technical field of magnetic tunnel junctions, in particular to a circuit based on a magnetic tunnel junction and a device based on a magnetic tunnel junction. Background technique [0002] The magnetic tunnel junction (MTJ) presents different configurations under different working conditions: high resistance state and low resistance state, and the previous state will be maintained when the power is turned off, so in the sense amplifier, read head, magnetic random access memory (MRAM) , magnetic sensors and other aspects have good application prospects. [0003] An existing sense amplifier based on a magnetic tunnel junction, such as Figure 1a As shown, it is mainly composed of a memory array module 11 , a multi-way bit line selector 12 and a sensitive amplification module 15 . Wherein, each memory cell in the memory array module 11 has a magnetic tunnel junction, such as the magnetic tunnel junction M01, etc., and each ma...

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Problems solved by technology

[0008] Although the above-mentioned traditional scheme can realize the reading function of the storage unit, there are still the following disadvantages: 1) the success rate of the above-mentioned scheme reading is not high, because the calculation in the memory requires V BL and V BLB Stable, thus the stable voltage difference can be read out more reliably, but when the traditional sense amplifier performs in-memory calculation operations, the existence of parasitic resistance and parasitic capacitance on the bit line BL and reference bit line BLB will cause V BL and V BLB Unstable, not even enough to form a voltage difference, which leads to failure to read data

2) Due to V BL and V BLB Unstable, so the time to form a voltage difference is lengthened, even if the data can be read, the speed of reading data is very slow; 3) due to V BL and V BLB Unstable, resulting in the inability of the above-mentioned sensitive amplifier to realize in-memory calculation

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