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High-sensitivity AlN piezoelectric hydrophone and preparation method thereof

A high-sensitivity, hydrophone technology, applied in the direction of instruments, using electrical devices, using electromagnetic means, etc., can solve the problem of low sensitivity and achieve the effects of increased sensitivity, good practical application value, and increased yield

Active Publication Date: 2020-09-18
ZHONGBEI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the invention is to solve the problem of low sensitivity in the above-mentioned prior art, and propose a high-sensitivity AlN piezoelectric hydrophone and its preparation method

Method used

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  • High-sensitivity AlN piezoelectric hydrophone and preparation method thereof
  • High-sensitivity AlN piezoelectric hydrophone and preparation method thereof
  • High-sensitivity AlN piezoelectric hydrophone and preparation method thereof

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Embodiment Construction

[0036] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] A high-sensitivity AlN piezoelectric hydrophone comprises an SOI substrate 1, a lower electrode layer 2, an AlN piezoelectric layer 3 and an upper electrode layer 4 are sequentially sputtered and deposited on the device silicon layer of the SOI substrate, and the upper electrode layer 4 is made of dry etched to form a patterned positive electrode 5 and a patterned negative electrode 6, and then use plasma-enhanced chemical vapor deposition to grow SiO 2 Protective layer 7, etch off the oxide layer on the patterned positive electrode 5 and the patterned negative electrode 6 afterwards, deposit the positive electrode pad 8 after metal stripping on the patterned positive electrode 5, in the pattern Deposit the metal-stripped negative electrode pad 9 on the negative electrode 6 after plating, etch the cavity 10 on the silicon substrate of t...

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Abstract

The invention discloses a high-sensitivity AlN-based piezoelectric hydrophone and a preparation method thereof, and the piezoelectric hydrophone with a novel structure solves the problems of low sensitivity, low electromechanical coupling coefficient and relatively tedious processing technology in a conventional piezoelectric hydrophone. When incident sound waves enable a cavity to deform, positive charges are generated at the center of a cavity due to tensile stress, negative charges are generated at the edge of the cavity due to compressive stress, a positive electrode is formed at the center of the cavity and a negative electrode is formed at the edge of the cavity by patterning a Mo electrode on AlN, so that a differential amplification structure is formed to improve the sensitivity and the electromechanical coupling coefficient. Compared with the prior art, the sensitivity of the hydrophone is multiplied, the technological process of the sensor is fewer in steps, and manufacturingis easier.

Description

technical field [0001] The invention relates to a piezoelectric hydrophone in the field of MEMS, in particular to a low-frequency, high-sensitivity MEMS piezoelectric hydrophone using AlN as a piezoelectric material and a preparation method. Background technique [0002] At present, many countries are committed to developing underwater acoustic technology in order to enhance the military combat capability and reconnaissance capability of ships, as well as the anti-submarine capability of submarines. Underwater acoustic equipment is not only the most effective underwater military equipment, but also the most effective tool for detecting the abundant underwater marine resources. In modern warfare, surface warships are no longer used on a large scale. Due to the excellent concealment and strategic strike capabilities of submarines, they are highly valued by navies of various countries. In order to improve the passive detection capability of submarines, the active collision avo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01H11/08
CPCG01H11/08
Inventor 薛晨阳张志东郑永秋崔丹凤张增星王强赵龙杨婷婷
Owner ZHONGBEI UNIV
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