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Substrate polishing system

A substrate and grinding layer technology, which is applied to grinding devices, grinding machine tools, and parts of grinding machine tools, can solve problems such as the inability to grasp the grinding layer of the substrate in real time, and the inability to accurately measure the thickness of the grinding layer in real time.

Pending Publication Date: 2020-08-25
K C TECH
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Problems solved by technology

Such a signal processing process requires 3 seconds to 7 seconds, so there is a problem that it takes 3 seconds to 7 seconds until time tz obtained by calculating the polishing thickness value Pi (or impedance value) at time ty. Delay Δts
[0009] Therefore, in the grinding process, there is a limit that the thickness of the grinding layer cannot be accurately measured in real time
More importantly, it is impossible to grasp the time point to when the substrate polishing layer reaches the target thickness by means of the polishing process in real time, and there is a fatal problem of ending the polishing at the time point te' after the delay time Δts

Method used

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Embodiment Construction

[0038] The present invention will be described in detail below with reference to the accompanying drawings. In describing the present invention, in order to clarify the gist of the present invention, detailed descriptions of well-known functions or configurations are omitted.

[0039] As shown in the figure, the substrate polishing system 1 of an embodiment of the present invention is used to flatly polish the polishing layer of the substrate W, comprising: a polishing disk 10, which is covered with a polishing pad 11 and rotates 11d; a slurry supply part (not shown) As shown in the figure), it supplies the slurry on the polishing pad 11; the polishing head 20, in the polishing process, pressurizes the substrate W so that the substrate W is located on the lower side; the regulator 40, which rotates 40d in the polishing process And the polishing pad 11 is pressurized and reformed; the slurry supply part (not shown), which supplies slurry to the polishing pad for the chemical fo...

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Abstract

The invention relates to a substrate polishing system, and provides a substrate polishing system which calculates a predicted fitting function from received data obtained from a substrate polishing layer in a polishing process, updates the predicted fitting function with the progress of the polishing process, predicts the change of information such as polishing thickness caused by the progress ofthe polishing process, and provides a substrate polishing system capable of accurately predicting a polishing end time point.

Description

technical field [0001] The present invention relates to a substrate polishing system, and in more detail, relates to a method of measuring the polishing thickness in real time while predicting the progress of the polishing amount in the polishing process of the substrate polishing layer, and accurately sensing while minimizing the time delay. The substrate polishing system at the point in time when the polishing is finished. Background technique [0002] The chemical mechanical polishing (CMP) system is used to eliminate the wide area of ​​height difference between the cell area and the peripheral circuit area caused by the unevenness of the substrate surface caused by repeated masking, etching, and wiring processes during the semiconductor element manufacturing process. Planarization is a system for precision polishing the surface of the substrate by improving the surface roughness of the substrate due to separation of contacts and wiring films for circuit formation and hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/005B24B57/02B24B49/10
CPCB24B37/005B24B57/02B24B49/105B24B37/04B24B49/12
Inventor 禹相政
Owner K C TECH
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