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Manufacturing method of flexible temperature sensor

A technology of temperature sensor and manufacturing method, which is applied in the field of flexible sensors, can solve the problems of large hysteresis, the inability of flexible temperature sensors to undergo high-temperature annealing, and failure to achieve high performance, and achieve stable and reliable performance, excellent measurement performance, and simple structure.

Active Publication Date: 2020-08-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is: in order to solve the technical problem that the existing flexible temperature sensor cannot undergo high temperature annealing in the preparation process, which generally has a large hysteresis and cannot achieve high performance, the present invention provides a method for manufacturing a flexible temperature sensor. The sensor made by the method has both good flexibility and strength, and the manufacturing method is simple, and has excellent performance

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  • Manufacturing method of flexible temperature sensor
  • Manufacturing method of flexible temperature sensor

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Embodiment 1

[0036] Such as figure 1 As shown, this embodiment provides a method for manufacturing a flexible temperature sensor, comprising the following steps:

[0037] Step 1. Select a double-sided polished silicon wafer as the substrate, place the silicon wafer in acetone, ethanol and deionized water in sequence for ultrasonic cleaning, and dry after cleaning. Preferably, the cleaning time is 5 minutes;

[0038] Step 2. Spin-coat a layer of photoresist 2 on the silicon substrate 1 at a spin-coating speed of 1000 rpm for 12 seconds, then 4000 rpm for 40 seconds; , 3min), exposure (21s), post-baking (100°C, 3min), development (20s) and other operations, a three-dimensional figure serpentine structure is formed;

[0039] Step 3, after forming by photolithography, sputter deposit a layer of sacrificial layer 3 and a layer of metal temperature sensitive resistor 4 on the silicon substrate 1, wherein the sacrificial layer 3 is metal chromium, and the deposition time is 5 minutes; the metal ...

Embodiment 2

[0045] Such as figure 1 As shown, this embodiment provides a method for manufacturing a flexible temperature sensor, comprising the following steps:

[0046] Step 1. Select a double-sided polished silicon wafer as the substrate, place the silicon wafer in acetone, ethanol and deionized water in sequence for ultrasonic cleaning, and dry after cleaning. Preferably, the cleaning time is 5 minutes;

[0047] Step 2. Spin-coat a layer of photoresist 2 on the silicon substrate 1 at a spin-coating speed of 1000 rpm for 12 seconds, then 4000 rpm for 40 seconds; , 3min), exposure (21s), post-baking (100°C, 3min), development (20s) and other operations, a three-dimensional figure serpentine structure is formed;

[0048]Step 3, after forming by photolithography, sputter deposit a layer of sacrificial layer 3 and a layer of metal temperature sensitive resistor 4 on the silicon substrate 1, wherein the sacrificial layer 3 is metal chromium, and the deposition time is 5 minutes; the metal t...

Embodiment 3

[0054] Such as figure 1 As shown, this embodiment provides a method for manufacturing a flexible temperature sensor, comprising the following steps:

[0055] Step 1. Select a double-sided polished silicon wafer as the substrate, place the silicon wafer in acetone, ethanol and deionized water in sequence for ultrasonic cleaning, and dry after cleaning. Preferably, the cleaning time is 5 minutes;

[0056] Step 2. Spin-coat a layer of photoresist 2 on the silicon substrate 1 at a spin-coating speed of 1000 rpm for 12 seconds, then 4000 rpm for 40 seconds; , 3min), exposure (21s), post-baking (100°C, 3min), development (20s) and other operations, a three-dimensional figure serpentine structure is formed;

[0057] Step 3, after forming by photolithography, sputter deposit a layer of sacrificial layer 3 and a layer of metal temperature sensitive resistor 4 on the silicon substrate 1, wherein the sacrificial layer 3 is metal chromium, and the deposition time is 5 minutes; the metal ...

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Abstract

The invention discloses a manufacturing method of a flexible temperature sensor, relates to the technical field of flexible sensors, and aims to solve the technical problems of relatively large hysteresis and incapability of achieving high performance generally caused by incapability of high-temperature annealing in a preparation process of an existing flexible temperature sensor. According to thetechnical scheme, the method comprises the following steps of cleaning a hard substrate, performing photoetching forming, depositing a sacrificial layer and a metal layer, removing photoresist, performing high-temperature annealing, manufacturing a flexible substrate, and etching the sacrificial layer. The flexible temperature sensor can be obtained; the preparation method is suitable for the flexible wearable material sensitive to the temperature; the prepared flexible temperature sensor has both flexibility and strength, and the metal temperature-sensitive resistor is firstly manufactured on the rigid substrate, so that high-temperature annealing is carried out, the hardness of the metal temperature-sensitive resistor is improved, the residual stress is reduced, the problem of large hysteresis of the flexible sensor is solved, the metal structure is more stable, the structure defects are eliminated, and the overall performance of the flexible temperature sensor is improved.

Description

technical field [0001] The invention relates to the technical field of flexible sensors, in particular to a method for manufacturing a flexible temperature sensor. Background technique [0002] With the continuous development of the Internet of Things and information technology, people are paying more and more attention to the demand for flexible electronic products, and temperature sensors are one of the most widely used sensors in modern social life, so the preparation of flexible temperature sensors has attracted much attention. Flexible sensors are mostly composed of flexible substrates and sensitive elements. Compared with traditional rigid substrates, since flexible substrates cannot withstand high temperatures, the preparation process of flexible temperature sensors cannot be annealed at high temperatures, or even annealed. Therefore, the current flexible temperature sensors are ubiquitous. The lag is large and the high performance cannot be achieved. Contents of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/18
CPCG01K7/18
Inventor 黎威志刘杨彭晨王洋梁志清太惠玲杜晓松
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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