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Method and system for improving data search rate in DRAM

A data search and speed technology, applied in the field of memory, can solve the problems of not allowing DRAM read and write operations, loss, and the rate limitation of multiple search DRAM tables, etc., to achieve the effect of improving read and write work efficiency and speed

Pending Publication Date: 2020-07-28
武汉二进制半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, DRAM can only hold data for a short time. In order to keep data, DRAM uses capacitor storage, so it must be refreshed every once in a while. If the storage unit is not refreshed, the stored information will be lost. During the refresh operation, it is Reading and writing operations on DRAM are not allowed, so at this point, the rate of searching the DRAM table is also affected to a certain extent;
[0005] The table that needs to be looked up is placed in a certain Bank of DRAM. When accessing the Bank, it is also limited by the access time of the same Bank. To meet the minimum time interval tRRD_L and tCCD_L, the rate of multiple lookups for DRAM tables will be limited. tRRD_L and tCCD_L limited to DRAM;

Method used

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  • Method and system for improving data search rate in DRAM
  • Method and system for improving data search rate in DRAM
  • Method and system for improving data search rate in DRAM

Examples

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Embodiment 1

[0065] see Figure 1 to Figure 3 As shown, the embodiment of the present invention provides a method for improving the data search rate in DRAM. The execution device for data search has multiple DRAM devices. The method includes the following steps:

[0066] S1. Obtain the total number of DRAM devices and the number of Bank groups in each DRAM device, and each Bank group includes at least one Bank;

[0067] S2. Perform mirror copying of the data to be stored, and store them in each Bank group respectively;

[0068] S3. Establish a search rule corresponding to the data to be stored, and the search rule records the storage address of the data to be stored and the search sequence corresponding to each storage address.

[0069] In the embodiment of the present invention, the number of DRAM devices of the execution device is first counted, and the number of Banks in each DRAM device is specifically counted, and at least one Bank group is established in each DRAM device, wherein ea...

Embodiment approach

[0079] In another implementation mode in the embodiment of the present invention, the method further includes a data search process, and the data search process includes the following steps:

[0080] A1. Respond to the search command and obtain the corresponding search rule;

[0081] A2. Find the storage data of the corresponding Bank group according to the search rules; wherein,

[0082] Stored data is the data to be stored in each Bank group;

[0083] When searching specifically, you can first query the stored data corresponding to the first search order of the search rule. Specifically, you can search the stored data corresponding to the first search index number in the mapping relationship table, and continue to obtain data search instructions later, while the first search order or first search When the storage data corresponding to the index number is still in the search state, the data search is performed on the storage data corresponding to the next sequence, and the o...

Embodiment 2

[0099] Embodiment two

[0100] Such as Figure 4 to Figure 7 As shown, the second embodiment of the present invention provides a method for increasing the data search rate in DRAM. The difference from the first embodiment of the present invention is that when there are at least two types of stored data, the method includes the following steps:

[0101] Q1. Obtain the total number of DRAM devices and the number of Bank groups in each DRAM device, and each Bank group includes at least one Bank;

[0102] Q2. Make mirror copies of various data to be stored, and store them in each Bank group respectively. A Bank group corresponds to at least one kind of data to be stored;

[0103] Q3. Establish search rules corresponding to each data to be stored, and each search rule respectively records the storage address of the corresponding data to be stored and the search sequence corresponding to each storage address.

[0104] In the embodiment of the present invention, when it is necessar...

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Abstract

The invention discloses a method and system for improving the data search rate in a DRAM, and relates to the technical field of memories. An execution device for data search is provided with a plurality of DRAM devices. The method comprises the following steps: obtaining the total number of the DRAM devices and the number of Bank groups in each DRAM device, wherein each Bank group at least comprises one Bank; performing mirror image copying on the to-be-stored data, and respectively storing the to-be-stored data into each Bank group; and establishing a search rule corresponding to the to-be-stored data, wherein the search rule records the storage addresses of the to-be-stored data and the search sequence corresponding to the storage addresses. According to the invention, the access time sequence limitation of the DRAM equipment is broken through, the data search rate in the DRAM is effectively improved, and the read-write working efficiency of the memory is further effectively improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method and system for improving the data search rate in DRAM. Background technique [0002] At this stage, the rate of access to DRAM devices is limited by the timing requirements of the DRAM device itself. In practical applications, the contents of the table items that need to be searched are stored in the Bank of the DRAM; [0003] When two lookup requests, that is, the interval between the two requests to read the contents of the table entries in the Bank, is limited by the timing requirements between the two read operations of the DRAM, the minimum interval is tRC, and the DRAM is searched multiple times. The rate of the table will be limited by the tRC of the DRAM, and the minimum interval is mainly determined by the characteristics of the DRAM itself; [0004] In addition, DRAM can only hold data for a short time. In order to keep data, DRAM uses capacitor storage, so it ...

Claims

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Application Information

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IPC IPC(8): G06F3/06G06F16/2455
CPCG06F3/061G06F3/0644G06F3/065G06F16/24564
Inventor 刘林吕佳杰
Owner 武汉二进制半导体有限公司
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