Preparation method of suspended graphene film structure

A graphene film and graphene technology, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, inorganic chemistry, etc., can solve the problems of low success rate, improve the success rate, reduce the probability of exposure damage, and reduce processing The effect of difficulty

Inactive Publication Date: 2020-07-17
XI AN JIAOTONG UNIV
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Problems solved by technology

[0003] At present, one of the key technologies for manufacturing suspended graphene micro-pressure sensors is to completely cover the graphene film on the cavity of the substrate structure and pattern it into a suitable shape, but the transfer of ultra-thin graphene film with nanometer thickness On the silicon-based cavity with a lateral dimension of tens of microns, and subsequent operations such as gluing, photolithography, development, and patterning of the graphene film must be directly performed. At this time, the integrity of the graphene film structure must be ensured. low success rate

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  • Preparation method of suspended graphene film structure

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Embodiment Construction

[0023] In order to make the purpose, technical effects and technical solutions of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention; obviously, the described embodiments It is a part of the embodiment of the present invention. Based on the disclosed embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall all fall within the protection scope of the present invention.

[0024] see figure 1 , a method for preparing a suspended graphene film structure according to an embodiment of the present invention, specifically comprising the following steps:

[0025] Spin-coat PMMA (Polymethyl Methacrylate, polymethyl methacrylate) on the surface of the copper-based graphene film to obtain a copper-based / ...

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Abstract

The invention discloses a preparation method of a suspended graphene film structure, which comprises the following steps: 1, coating PMMA on the surface of a copper-based graphene film to obtain a copper-based / graphene / PMMA structure, 2, putting the copper-based / graphene / PMMA structure obtained in the step 1 into a copper corrosive liquid, and etching to remove the copper substrate to obtain a PMMA / graphene structure, 3, transferring the PMMA / graphene structure obtained in the step 2 to a silicon-based cavity structure to obtain a PMMA / graphene / silicon structure, and 4, spin-coating a photoresist on the PMMA surface of the PMMA / graphene / silicon structure obtained in the step 3, photoetching and developing, patterning the graphene structure by using oxygen plasma, and removing the photoresist by using acetone to obtain the suspended graphene film structure. According to the method, the processing and manufacturing difficulty of the suspended graphene can be reduced, the coverage integrity of the suspended graphene film structure is ensured, and the success rate is high.

Description

technical field [0001] The invention relates to the technical field of graphene pressure sensors, in particular to a method for preparing a suspended graphene film structure. Background technique [0002] Graphene film has a series of advantages such as high strength, 2D properties, high sub-mobility, and is sensitive to pressure and impermeable to gas; in addition, compared with the traditional silicon film structure, the Young's modulus of 1TPa And the ultra-thin thickness of 0.335nm endows the graphene film with extreme mechanical properties. The excellent electrical and mechanical properties enable graphene films to be used in the manufacture of high-sensitivity suspended graphene micro-pressure sensors. [0003] At present, one of the key technologies for manufacturing suspended graphene micro-pressure sensors is to completely cover the graphene film on the cavity of the substrate structure and pattern it into a suitable shape, but the transfer of ultra-thin graphene f...

Claims

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Application Information

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IPC IPC(8): C01B32/194H01L21/04H01L21/027G01L9/00G01L1/00
CPCC01B32/194G01L1/00G01L9/0042H01L21/0274H01L21/042
Inventor 赵立波李真李支康李磊罗运运杨萍卢德江王永录王久洪蒋庄德
Owner XI AN JIAOTONG UNIV
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