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Two-dimensional molybdenum ditelluride vertical heterojunction and preparation method and application thereof

A molybdenum ditelluride and heterojunction technology, which is applied in the field of two-dimensional materials, can solve the problems of unstable Mo-Te bond, low chemical reactivity, and easy transformation of two phases, so as to reduce the Schottky barrier, Evenly mixed and easy to steam

Active Publication Date: 2020-07-10
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

For MoTe 2 In terms of MoTe atoms, due to the low chemical reactivity of Mo atoms and Te atoms, the difference in electronegativity between the two elements is also small (less than 0.3eV), resulting in MoTe 2 The Mo-Te bond in the medium is unstable, and it is easy to lose Te at high temperature; at the same time, because MoTe 2 The energy difference between the semiconducting 2H phase and the metallic 1T’ phase is very small. During the growth process, the two phases are easily transformed, and the pure phase of MoTe can be imagined. 2 more difficult

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  • Two-dimensional molybdenum ditelluride vertical heterojunction and preparation method and application thereof
  • Two-dimensional molybdenum ditelluride vertical heterojunction and preparation method and application thereof
  • Two-dimensional molybdenum ditelluride vertical heterojunction and preparation method and application thereof

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preparation example Construction

[0032] The embodiment of the present invention provides a method for preparing a two-dimensional molybdenum ditelluride vertical heterojunction, using such as figure 1The shown device comprises the steps of:

[0033] S1 Dried the mixed solution of ammonium tetramolybdate and sodium chloride and put it into the porcelain boat as the molybdenum source 5, and buckled a silicon wafer directly above the porcelain boat as the growth substrate 2, leaving about 5mm in between slit to ensure the ingress and egress of gas, tellurium powder is put into another porcelain boat as tellurium source 4; two porcelain boats are all put into the sleeve pipe 1 of an end opening (the preferred diameter of this sleeve pipe 1 is 2cm, and length is 17cm), and the tellurium source 4 is close to the open end of the casing 1, then the casing 1 is put into the horizontal tube furnace 3, and the molybdenum source 5 is positioned at the center of the horizontal tube furnace 3;

[0034] S2 Raise the temper...

Embodiment 1

[0043] Place 1g of tellurium powder as the tellurium source in the upstream of the bushing, dissolve 30mg of ammonium tetramolybdate and 30mg of sodium chloride in 1mL of deionized water to prepare a mixed solution, and dry it at 120°C as the molybdenum source. A silicon wafer with a 300nm-thick oxide layer was soaked in a 1:10 hydrofluoric acid solution for 30 seconds, then used as a growth substrate, and placed upside down on the molybdenum source. Pre-evacuation was carried out prior to the reaction, and then argon gas with a flow rate of 400 sccm was introduced for 5 minutes to make the air pressure in the tube furnace reach one atmospheric pressure and remove residual oxygen. The heating rate was set at 40°C / min, and the reaction temperature was set at 650°C. During the reaction, the flows of argon and hydrogen were 80 sccm and 5 sccm respectively. After the reaction, the carrier gas was kept constant, and the product was cooled to room temperature with the furnace, and a...

Embodiment 2

[0045] Place 1g of tellurium powder as the tellurium source in the upstream of the bushing, dissolve 30mg of ammonium tetramolybdate and 30mg of sodium chloride in 1mL of deionized water to prepare a mixed solution, and dry it at 120°C as the molybdenum source. A silicon wafer with a 300nm-thick oxide layer was soaked in a 1:10 hydrofluoric acid solution for 30 seconds, then used as a growth substrate, and placed upside down on the molybdenum source. Pre-evacuation was carried out prior to the reaction, and then argon gas with a flow rate of 400 sccm was introduced for 5 minutes to make the air pressure in the tube furnace reach one atmospheric pressure and remove residual oxygen. The heating rate was set at 40°C / min, and the reaction temperature was set at 700°C. During the reaction, the flows of argon and hydrogen were 80 sccm and 5 sccm respectively. After the reaction, the carrier gas was kept constant, and the product was cooled to room temperature with the furnace, and a...

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Abstract

The invention belongs to the field of two-dimensional materials, and particularly discloses a two-dimensional molybdenum ditelluride vertical heterojunction and a preparation method and application thereof. The two-dimensional molybdenum ditelluride vertical heterojunction comprises a 1T'-MoTe<2> part and a 2H-MoTe<2> part, and the two parts are connected through interlayer Van der Waals' force; the preparation method comprises the following steps: S1, drying a mixed solution of ammonium tetramolybdate and sodium chloride, putting the dried mixed solution as a molybdenum source into a reactor,putting a growth substrate on the molybdenum source, putting tellurium powder as a tellurium source into the reactor, and putting the tellurium powder at the upstream of the molybdenum source; and S2, raising the temperature of the molybdenum source and the tellurium source to a reaction temperature, naturally cooling to room temperature, introducing carrier gas into the reactor to bring the tellurium source to the molybdenum source, introducing a reducing agent, and generating the two-dimensional molybdenum ditelluride vertical heterojunction on the growth substrate. The metal phase and semiconductor phase vertically stacked MoTe2 heterostructure prepared by the invention can effectively reduce the Schottky barrier of contact between a metal electrode and a material, and an important thought for improving metal-semiconductor contact is provided.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials, and more specifically relates to a two-dimensional molybdenum ditelluride vertical heterojunction and its preparation method and application. Background technique [0002] When constructing micro-nano devices of semiconductor materials, the contact between metal and semiconductor is a very important issue in the manufacture of semiconductor devices, and the contact situation directly affects the device performance. Metal-semiconductor contacts can be divided into ohmic contacts and Schottky contacts in nature. Among them, the characteristics of Schottky contacts are that the current-voltage characteristics of the contact area are nonlinear, showing a similar junction voltage-current effect, also known as rectification. Effect; the characteristic of ohmic contact is that the characteristics of current and voltage are linear, that is, the contact is similar to a series connection of resisto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/267H01L21/04H01L29/06
CPCH01L21/04H01L29/0603H01L29/0684H01L29/267
Inventor 甘霖李奥炬翟天佑
Owner HUAZHONG UNIV OF SCI & TECH
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