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Composite material, quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and composite material technology, applied in the field of quantum dot light-emitting devices, can solve the problems of difficult and complicated development

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, such development is very difficult and complicated

Method used

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  • Composite material, quantum dot light emitting diode and preparation method thereof
  • Composite material, quantum dot light emitting diode and preparation method thereof
  • Composite material, quantum dot light emitting diode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0068] The preparation steps of the composite material are as follows:

[0069] 2.5g of carbon black was added to a mixture of 100ml of concentrated sulfuric acid and 50ml of concentrated nitric acid, heated and stirred for 24 hours;

[0070] After the solution is cooled, add deionized water to dilute, and adjust the acidity of the solution to PH=1;

[0071] Adding excess acetone, removing the precipitate, and distilling the remaining solution to obtain a solid, which is the graphene quantum dot;

[0072] Dissolving the graphene quantum dot solid in an aqueous solvent with a concentration of 10mg / ml; and preparing an aqueous solution of alkali metal carbonate in advance with a concentration of 20mg / ml;

[0073] Gradually add an aqueous alkali metal carbonate solution to the graphene quantum dot solution until the pH value of the solution reaches 7.

[0074] The above solution is distilled to obtain a solid, which is a composite material.

Embodiment 2

[0076] The preparation steps of the formal structure light-emitting diode are as follows:

[0077] Use transparent conductive film ITO as the anode, 50nm thick;

[0078] In the air environment, deposit PEDOT:PSS on the anode as a hole injection layer by solution method, with a thickness of 30nm, and anneal in air at 150°C for 10 minutes;

[0079] In a nitrogen environment, deposit TFB on the hole injection layer as a hole transport layer by solution method, with a thickness of 30nm, and anneal at 150°C for 30 minutes in a nitrogen environment;

[0080] In a nitrogen environment, deposit CdSe / ZnS as a quantum dot light-emitting layer on the hole transport layer by solution method, with a thickness of 25nm, and anneal at 80°C for 30 minutes in a nitrogen environment;

[0081] In a nitrogen environment, use a solution method to deposit graphene quantum dots bound to the surface of cesium on the quantum dot light-emitting layer as an electron transport layer, with a thickness of ...

Embodiment 3

[0084] The preparation steps of the trans-structure light-emitting diode are as follows:

[0085] Use transparent conductive film ITO as the cathode, 50nm thick;

[0086] In a nitrogen environment, use a solution method to deposit graphene quantum dots bound to the surface of cesium on the cathode as an electron transport layer, with a thickness of 40nm, and anneal at 70°C for 20 minutes in a nitrogen environment;

[0087] In a nitrogen environment, deposit CdSe / ZnS as a quantum dot light-emitting layer on the electron transport layer by solution method, with a thickness of 25nm, and anneal at 80°C for 30 minutes in a nitrogen environment;

[0088] Transfer the substrate to the evaporation chamber and vacuum to 10 -5 Pa level, TCTA is vapor deposited on the quantum dot light-emitting layer as a hole transport layer, with a thickness of 40nm;

[0089] Evaporate and deposit HAT-CN on the hole transport layer as a hole injection layer, 10nm thick;

[0090] Al was evaporated on...

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Abstract

The invention discloses a composite material, a quantum dot light emitting diode and a preparation method thereof, the composite material comprises a graphene quantum dot and a COOM group combined onthe surface of the graphene quantum dot, and M is an alkali metal element. By changing the size of the graphene quantum dot and adjusting the work function and the energy level structure of the graphene quantum dot, the work function of the graphene quantum dot is promoted to be matched with the energy level of the luminescent material. Furthermore, the graphene quantum dots are subjected to alkali metal surface modification, so that the work function of the graphene quantum dots can be further reduced, and the application range of the graphene quantum dots as an electron transport material isexpanded.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a composite material, a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes and organic light-emitting diodes have shown great application prospects in the display field due to their self-luminescence, fast response speed, high contrast ratio, low power consumption, large viewing angle, and flexibility. In the research of these light-emitting diodes, a variety of high-performance light-emitting materials emerge in an endless stream. Since different light-emitting materials have different energy level structures, in order to give full play to the performance of these light-emitting materials, it is necessary to effectively inject and transport charge carriers. This requires the continuous development of charge transport materials with different energy level structures to match the energ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56H01L51/00C09K11/65B82Y30/00H10K99/00
CPCC09K11/65B82Y30/00H10K71/10H10K85/00H10K50/16H10K71/00
Inventor 苏亮谢相伟田亚蒙眭俊黄航
Owner TCL CORPORATION
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