A microwave-assisted atomic layer deposition method and reactor

Abstract

The invention belongs to the technical field of integrated circuit manufacturing, and specifically relates to a microwave-assisted atomic layer deposition method and a reactor. The atomic layer deposition reactor of the present invention comprises: a reaction chamber, the top of which is provided with a quartz window, the interior is provided with a substrate tray, and the side wall is provided with an excitation coil; a microwave source is arranged above the quartz window; adjustment; the gas pipeline, including the first reaction source gas pipeline, the second reaction source gas pipeline and the inert gas pipeline, are used to transport the first reaction source, the second reaction source and the inert gas; wherein, The microwave source decomposes the first reaction source by microwave irradiation, and the microwave source and the excitation coil jointly generate a microwave electron cyclotron resonance source, which excites the second reaction source to form high-energy plasma. The invention can effectively improve the conductivity and ductility of the film, has ideal step coverage and precise film thickness control capability, and can meet the requirements of advanced CMOS integrated circuit technology.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to a microwave-assisted atomic layer deposition method and a reactor. Background technique [0002] For the back-end process of copper interconnection, metal nitrides such as tantalum nitride and titanium nitride need to be filled in deep trenches and vias as copper diffusion barrier layers. As the process node continues to advance, the aspect ratio of the via hole continues to increase, resulting in poor step coverage and partial blockage in the traditional physical vapor deposition (PVD) process when filling the barrier layer. In order to solve this problem, the atomic layer deposition process was introduced as a barrier filling method, because the atomic layer deposition process has the characteristics of self-limited growth, and the grown film has good conformality and high step coverage. However, because the metal precursors and reactants u...

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Problems solved by technology

However, because the metal precursors and reactants used in the atomic layer deposition process are difficult to fully react, resulting in high impurity content, resulting in generally high resistivity of the barrier layer, it is difficult to serve as a good conductive barrier layer

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