Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-area quasi-single crystal perovskite film closed circulation preparation device and preparation method thereof

A technology of closed circulation and preparation of devices, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of material waste, large internal resistance of the film, environmental pollution, etc., and achieve simple device structure and mild preparation conditions Controllable, simple and effective preparation method and environmental protection effect

Pending Publication Date: 2020-07-03
QUANZHOU NORMAL UNIV
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the patented method does not grow the quasi-single crystal perovskite film in situ on the carrier transport layer. The internal resistance of the film obtained during large-scale preparation is large, and the perovskite precursor and anti-solvent cannot be reused, resulting in serious material waste. , heavy metal lead and solvent volatilization during the preparation process lead to serious environmental pollution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-area quasi-single crystal perovskite film closed circulation preparation device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Embodiment 1: prepare large-area quasi-single crystal perovskite film as follows:

[0053] S1, MAPbI 3 Preparation of perovskite precursor solution: MAI and PbI 2 Add it into the mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide with a volume ratio of 4:1 in an equimolar ratio, and stir the mixture at 70°C for 6 hours to prepare a concentration of 1.2mol / LMAPbI 3 Perovskite Precursor. Among them, MA + for CH 3 NH 3 + .

[0054]S2. Preparation of a large-area reaction substrate: on a cleaned large-area transparent FTO conductive glass substrate, a tin metal grid electrode is prepared by vacuum thermal evaporation; A nanometer-thick tin dioxide electron transport layer; electrophoresis is used to deposit aminated graphene quantum dots on the surface of the tin dioxide electron transport layer.

[0055] S3. Growth of large-area quasi-single crystal perovskite film: open the transparent chamber door, place the large-area reaction substrate prepared in ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a large-area quasi-single crystal perovskite film closed circulation preparation device, which comprises a precursor solution circulation system, an anti-solvent circulation system, an inert gas circulation system, a large-area quasi-single crystal perovskite film closed growth system and a heating system. A first liquid inlet and a first liquid outlet of the precursor solution circulation system, a second liquid inlet and a second liquid outlet of the anti-solvent circulation system, and a gas inlet and a gas outlet of the inert gas circulation system are all communicated with the large-area quasi-single crystal perovskite film closed growth system. The heating system is used for heating the large-area quasi-single crystal perovskite film closed growth system. Thedevice is simple in structure, the preparation conditions are mild and controllable, the preparation method is simple, effective and environmentally friendly, and large-scale continuous cyclic production of various large-area films prepared based on a solution method can be achieved.

Description

technical field [0001] The invention relates to a large-area quasi-single crystal perovskite thin-film closed cycle preparation device and a preparation method thereof, and relates to the technical field of thin-film solar cells. Background technique [0002] In recent years, the photoelectric conversion efficiency of the perovskite solar cell (PSC) laboratory has been refreshed from 3.8% in 2009 to 25.2% in 2019, which has industrial value. However, most of these certified or reported high-efficiency PSCs are based on relatively small areas (generally 0.1cm 2 , some as small as 0.03cm 2 ). Spin-coating technology is a low-cost and easy-to-operate technology that achieves a total device area of ​​100cm 2 (effective area 50.6cm 2 ) The photoelectric conversion efficiency is 13%, but the area exceeds 100cm 2 , it is difficult to obtain a uniform film. Therefore, researchers have also developed several other solution-based techniques, such as knife coating, nip die coatin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B7/14C30B28/04H01L51/48H01L51/42
CPCC30B29/12C30B28/04C30B7/14H10K71/12H10K30/00Y02E10/549Y02P70/50
Inventor 肖尧明
Owner QUANZHOU NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com