Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Bounded Wave Simulator with Three Different Electric Field Regions

A simulator, bounded wave technology, applied in the electromagnetic field

Active Publication Date: 2021-08-13
TSINGHUA UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage is that there is a contradiction between the upper limit of the usable frequency and the measurement size, which is limited to a quarter of the minimum operating wavelength, so it is only suitable for small devices such as chips

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Bounded Wave Simulator with Three Different Electric Field Regions
  • A Bounded Wave Simulator with Three Different Electric Field Regions
  • A Bounded Wave Simulator with Three Different Electric Field Regions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings.

[0039] Embodiments of the present disclosure are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. The present disclosure can also be implemented or applied through different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other. Based on the embodiments in the present disclosure, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the present disclosure provides a bounded wave simulator with three different electric field regions, which belongs to the field of electromagnetic technology. Wherein the bounded wave simulator includes: a pulse signal generator, an electric field device and a terminal load, the electric field device is arranged at the transmitting port of the pulse signal generator, the electric field device includes a first metal plate and a second metal plate, the first metal plate and the second metal plate When the two metal plates are connected to the power supply, three electric field areas are formed in sequence, and the three electric field areas are arranged along the pulse signal transmission direction of the pulse signal generator, and the corresponding plate spacing of the three electric field areas is different; the terminal load is set on the electric field device The end far away from the pulse signal generator, the terminal load is located in the pulse signal transmission direction of the pulse signal generator. In this way, using the electric field areas of three different plate spacings of the electric field device, different electric field strengths required for device testing can be realized, the electric field strength, frequency and amplitude of the bounded wave simulator can be improved, and the electric field of the bounded wave simulator can be optimized performance.

Description

technical field [0001] The present disclosure relates to the field of electromagnetic technology, in particular to a bounded wave simulator with three different electric field regions. Background technique [0002] Electromagnetic Compatibility (Electro-Magnetic Compatibility, EMC) is a subject that studies the coexistence of various electrical equipment (including organisms in a broad sense) without causing degradation under the conditions of limited space, time, and spectrum resources. It includes electromagnetic interference and electromagnetic susceptibility. The electromagnetic interference test is to measure the electromagnetic wave signal generated and emitted by the equipment under test under normal working conditions to reflect the strength of the interference to the surrounding electronic equipment. The electromagnetic susceptibility test is to measure the anti-interference ability of the equipment under test to electromagnetic disturbance. [0003] With the rapid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00G01R29/08G01R1/28
CPCG01R1/28G01R29/0814G01R31/001
Inventor 何金良韩志飞杨光照胡军余占清张波
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com