Resistive memory and manufacturing method thereof

Abstract

A resistive variable memory and its manufacturing method, wherein the resistive variable memory includes: a substrate; sequentially located on the substrate: a first electrode, a resistive variable medium layer, a barrier layer and a tunneling layer, and a second electrode; wherein , the barrier layer and tunneling layer includes a multilayer two-dimensional material, and the two-dimensional material is one of the following materials: HBN, MoSe 2 、MoTe 2 、WS 2 、WSe 2 or WTe 2 . The above multi-layer two-dimensional material is inserted between the second electrode and the resistive medium layer. During the setting process, it can effectively block and limit the diffusion of oxygen ions into the second electrode and undergo an oxidation reaction with it, reducing the consumption of oxygen ions, and at the same time utilizing Two-dimensional material tunneling improves low-resistance state resistance. In the reset process, there is no need for the second electrode to serve as an oxygen storage layer to provide oxygen ions. Without applying a large voltage to generate a large current, there will be enough oxygen ions to participate in the recombination of oxygen vacancies, and a complete reset can be achieved. The cycle characteristics of the device are improved as a whole and the programming energy consumption is reduced.

Description

technical field [0001] The disclosure belongs to the technical field of semiconductors and integrated devices, and relates to a resistive memory and a manufacturing method thereof. Background technique [0002] With the rapid development and popularization of mobile smart terminals, the Internet of Things, and wearable devices, the market demand for non-volatile memory is increasing and its performance requirements are becoming more and more stringent. In addition, with the continuous shrinking of semiconductor process technology nodes, the performance degradation of flash memory (Flash) devices based on charge storage is becoming more and more serious, which promotes the next generation of non-volatile devices based on new material structures and new storage mechanisms. Memory development and research. [0003] Among many new non-volatile memories, RRAM has relatively low programming energy consumption, fast read and write speed, good scalability, good retention characteri...

AI Technical Summary

Problems solved by technology

However, the current resistive memory has the problem of incomplete reset (reset is also called reset) (RESET), which may lead to device failure as the number of cycles increases

In addition, there is also the problem of relatively high programming energy consumption during the reset process.

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