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SiC MPS diode containing NiO/SiC heterojunction

A diode and heterojunction technology, applied in the field of semiconductor devices, can solve problems such as large turn-on voltage, achieve low forward turn-on voltage, improve the effect of high on-state voltage drop, and high hole injection capability

Active Publication Date: 2020-06-05
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a SiC MPS diode containing a NiO / SiC heterojunction, which solves the problem of excessive turn-on voltage of the SiC homogeneous PIN structure existing in the prior art

Method used

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Embodiment 1

[0034] Hereinafter, the present invention will be further described in detail by taking a 650V 4H-SiC MPS diode containing NiO / SiC heterojunction as an example.

[0035] A kind of SiC MPS diode containing NiO / SiC heterojunction of the present invention, structure such as figure 1 As shown, a substrate 1 is included, and an n-SiC buffer layer 2 and an n-SiC drift region 3 are sequentially formed on the substrate 1. The upper end surface of the n-SiC drift region 3 is covered with an anode 5, and the lower end surface of the substrate 1 is covered with a cathode 6. A plurality of p-NiO junction regions 4 are inlaid at intervals on the upper surface of the n-SiC drift region 3 close to the anode 5 .

[0036] Wherein, the material of the p-NiO junction region 4 is p-type NiO, the thickness of the p-NiO junction region 4 is 0.5 μm, and the width of the p-NiO junction region 4 is 0.5 μm.

[0037]The material of the substrate 1 is n-type SiC, the thickness of the substrate 1 is 300 ...

Embodiment 2

[0043] Hereinafter, the present invention will be further described in detail by taking a 1200V 4H-SiC MPS diode containing NiO / SiC heterojunction as an example.

[0044] A kind of SiC MPS diode containing NiO / SiC heterojunction of the present invention, structure such as figure 1 As shown, a substrate 1 is included, and an n-SiC buffer layer 2 and an n-SiC drift region 3 are sequentially formed on the substrate 1. The upper end surface of the n-SiC drift region 3 is covered with an anode 5, and the lower end surface of the substrate 1 is covered with a cathode 6. A plurality of p-NiO junction regions 4 are inlaid at intervals on the upper surface of the n-SiC drift region 3 close to the anode 5 .

[0045] Wherein, the material of the p-NiO junction region 4 is p-type NiO, the thickness of the p-NiO junction region 4 is 0.5 μm, and the width of the p-NiO junction region 4 is 1.0 μm.

[0046] The material of the substrate 1 is n-type SiC, the thickness of the substrate 1 is 30...

Embodiment 3

[0052] Hereinafter, the present invention will be further described in detail by taking a 2700V 4H-SiC MPS diode containing NiO / SiC heterojunction as an example.

[0053] A kind of SiC MPS diode containing NiO / SiC heterojunction of the present invention, structure such as figure 1 As shown, a substrate 1 is included, and an n-SiC buffer layer 2 and an n-SiC drift region 3 are sequentially formed on the substrate 1. The upper end surface of the n-SiC drift region 3 is covered with an anode 5, and the lower end surface of the substrate 1 is covered with a cathode 6. A plurality of p-NiO junction regions 4 are inlaid at intervals on the upper surface of the n-SiC drift region 3 close to the anode 5 .

[0054] Wherein, the material of the p-NiO junction region 4 is p-type NiO, the thickness of the p-NiO junction region 4 is 0.5 μm, and the width of the p-NiO junction region 4 is 2.0 μm.

[0055] The material of the substrate 1 is n-type SiC, the thickness of the substrate 1 is 30...

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Abstract

The invention discloses a SiC MPS diode containing a NiO / SiC heterojunction. The SiC MPS diode comprises a substrate, and an n-SiC buffer layer and an n-SiC drift region are sequentially arranged on the substrate. The upper end face of the n-SiC drift region is covered with an anode, the lower end face of the substrate is covered with a cathode, and a plurality of p-NiO junction regions are embedded at the position, close to the anode, of the upper surface of the n-SiC drift region at intervals. According to the invention, the problems of overhigh forward turn-on voltage and overlarge on-stateresistance of the SiC MPS diode in the prior art are solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a SiC MPS diode containing a NiO / SiC heterojunction. Background technique [0002] Silicon carbide (SiC) material has the characteristics of large band gap, high thermal conductivity, high critical breakdown electric field strength, high saturated carrier drift velocity and good thermal stability, and is an ideal material for manufacturing power semiconductor devices. Compared with Si devices, high-power devices made of SiC have lower on-state voltage drop, higher operating frequency, lower power consumption, smaller volume and better high temperature resistance characteristics, and are more suitable for power electronic circuits. Among them, the SiC MPS diode not only has the characteristics of high blocking voltage and low leakage current of PIN, but also has the advantages of fast switching speed and small turn-on voltage of SBD. When used in power e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/861H01L29/0634Y02B70/10
Inventor 王曦钟艺文蒲红斌胡继超王敏张萌
Owner XIAN UNIV OF TECH
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